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Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
by John D. Cressler (Editor)
[size=120%]Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
By John D. Cressler
Publisher: CRC
Number Of Pages: 1248
Publication Date: 2005-11-01
ISBN-10 / ASIN: 0849335590
ISBN-13 / EAN: 9780849335594
Binding: Hardcover
Book Description:
An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.
Summary: SiGe Photonics
Rating: 5
I used this book as a reference in my study of carbon doped SiGe HBT structurres. In my previous work eight years ago, i worked on GaAs HBT integrated photonics. I find this book very useful in outlining the foundations for 1310/1550Nm integrated photonics at >10Gbit/sec using relatively inexpensive SiGe structures as commpared to InP or discrete photonic solutions.
打开“start.pdf”文件,单击目录即可跳至相应的章节文件,enjoy!
[ 本帖最后由 lotusky 于 2008-1-17 00:31 编辑 ] |
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