charge pump + NMOS LDO 求助

490590125 · 发表于 2022-5-5 14:45:26

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求助，大家有没有用charge pump 抬高NMOS 栅压的LDO资料论文啊？求分享~

gm-cfiltersz · 发表于 2022-5-5 14:54:46

ST的103里面capless LDO就是这么做的。

490590125 · 发表于 2022-5-5 15:02:34

gm-cfiltersz 发表于 2022-5-5 14:54
ST的103里面capless LDO就是这么做的。

有paper可以直接看的嘛？

sunjimmy · 发表于 2022-5-6 15:52:20

2018_A 1.24 μ A Quiescent Current NMOS Low Dropout Regulator With Integrated Low-Power Oscillator-Driven Charge-Pump and Switched-Capacitor Pole Tracking Compensation

Published in: IEEE Journal of Solid-State Circuits ( Volume: 53, Issue: 8, Aug. 2018)

Abstract:
Supply regulation using low quiescent current linear regulators helps in extending the battery life of power aware applications with very long standby time. A 1.24 μA quiescent current NMOS low dropout (LDO) that uses a hybrid bias current generator (HBCG) which boosts the bias current dynamically and adaptively to improve the transient response is presented in this paper. A bias-current scalable error amplifier with an on-demand pull-up/pull-down buffer drives the NMOS pass device. The error amplifier is powered with an integrated dynamic frequency charge pump to ensure low dropout voltage. A low-power relaxation oscillator (LPRO) generates the charge pump clocks. A novel switched-capacitor pole tracking (SCPT) compensation scheme is proposed to ensure stability up to maximum load current of 150 mA with a low-ESR 1 μF output capacitor. Designed in a 0.25 μm CMOS process, the LDO has an output voltage range of 1-3 V, a dropout voltage of 240 mV, and a core area of 0.11 mm 2 .