RF CMOS OSCILLATORS FOR MODERN WIRELESS APPLICATIONS

davidwx54

While mobile phones enjoy the largest production volume ever of any consumer electronics products, the demands they place on radio-frequency (RF) transceivers are particularly aggressive, especially on integration with digital processors, low area, low power consumption, while being robust against process-voltage-temperature variations. Since mobile terminals inherently operate on batteries, their power budget is severely constrained. To keep up with the ever increasing data-rate, an ever-decreasing power per bit is required to maintain the battery lifetime. The RF oscillator is the second most power-hungry block of a wireless radio (after power amplifiers). Consequently, any power reduction in an RF oscillator will greatly benefit the overall power efficiency of the cellular transceiver. Moreover, the RF oscillators' purity limits the transceiver performance. The oscillator's phase noise results in power leakage into adjacent channels in a transmit mode and reciprocal mixing in a receive mode. On the other hand, the multi-standard and multi-band transceivers that are now trending demand wide tuning range oscillators. However, broadening the oscillator's tuning range is usually at the expense of die area (cost) or phase noise.

The main goal of this book is to bring forth the exciting and innovative RF oscillator structures that demonstrate better phase noise performance, lower cost, and higher power efficiency than currently achievable.

Technical topics discussed in RF CMOS Oscillators for Modern Wireless Applications include:

• Design and analysis of low phase-noise class-F oscillators
• Analyze a technique to reduce 1/f noise up-conversion in the oscillators
• Design and analysis of low power/low voltage oscillators
• Wide tuning range oscillators
• Reliability study of RF oscillators in nanoscale CMOS
  

RF CMOS OSCILLATORS FOR MODERN WIRELESS APPLICATIONS.rar (29.98 MB, 下载次数: 397 )

2019-11-20 13:40 上传

点击文件名下载附件

student321

thanks a lot

xuleiwx1

是《RF CMOS Oscillators for Modern Wireless Applications【River Publishers 2019】Masoud Babaie(Delft University of Technology_The Netherlands)》

fresnel2015

楼主  是做class F oscillator 的大牛吗？

fresnel2015

现在我在用电感和mind 搭的class F vco, 在TRAN+PSS仿真的时候，发现TRAN的波形是40G+，而在output log的显示的freq的6.2 G值和我实际计算的差不多，可能是因为PSS beat frequency  设置的是设计的值，这是为什么哪？

fresnel2015

在用电感和mind 搭建的class f，在跑tran+pss+pnoise 时，output log 显示是6.3G（和我计算的差不多），而tran 测试的freq是59G，pss beat frequency设置 是6G，难道是由于oscillator 谐振到59G了吗？

dannymu

谢谢

joshuacp

Good.

lhyi

New 2019 book,
1 Introduction
2 LC Oscillator Structures
3 A Class-F3 CMOS Oscillator
4 An Ultra-Low Phase Noise Class-F2 CMOS Oscillator
5 A 1/f Noise Upconversion Reduction Technique
6 A Switching Current-Source Oscillator
7 Tuning Range Extension of an Oscillator Through CM Resonance
8 A Study of RF Oscillator Reliability in Nanoscale CMOS

podcast

thx for sharing~