2014-2017 CMOS Outphasing by Texas Instruments

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2014-2017 CMOS Outphasing by Texas Instruments.pdf (9.88 MB , 下载次数: 65 )

2019-2-27 20:48 上传

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包括以下论文：

①L. Ding, J. Hur, R. Hezar and B. Haroun, "A 25 dBmoutphasing power amplifier with novel non-isolated combining network," 2014 IEEERadio Frequency Integrated Circuits Symposium, Tampa, FL, 2014, pp. 231-234.
②A. Banerjee, R. Hezar, L. Ding, N. Schemm and B. Haroun, "A 29.5dBmclass-E outphasing RF power amplifier with performance enhancement circuits in45nm CMOS,"ESSCIRC 2014 - 40th EuropeanSolid State Circuits Conference (ESSCIRC), Venice Lido, 2014, pp. 467-470.
③A. Banerjee, R. Hezar, L. Ding, "Efficiency improvement techniques forRF power amplifiers in deep submicron CMOS," CICC 2015 -IEEE Custom Integrated Circuits Conference (CICC), San Jose, 2015, pp. 1-4.
④L. Ding, J. Hur, A. Banerjee, R. Hezar and B. Haroun, "A 25 dBmOutphasing Power Amplifier With Cross-Bridge Combiners," in IEEE Journalof Solid-State Circuits, vol. 50, no. 5, pp. 1107-1116, May 2015.
⑤A. Banerjee, L. Ding and R. Hezar, "High efficiency multi-mode outphasing RF poweramplifier in 45nm CMOS," ESSCIRC Conference 2015 - 41st EuropeanSolid-State Circuits Conference (ESSCIRC), Graz, 2015, pp. 168-171.
⑥A. Banerjee, R. Hezar, L. Ding and B. Haroun, "A 29.5dBmClass-E Outphasing RF Power Amplifier With Efficiency and Output PowerEnhancement Circuits in 45nm CMOS," in IEEETransactions on Circuits and Systems I: Regular Papers, vol. 64, no. 8, pp. 1977-1988, Aug. 2017.

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