Bond Pad Design With Low Capacitance in CMOS for RF Applications(2007)

semico_ljj

IEEE ELECTRON DEVICE LETTERS, VOL. 28, NO. 1, JANUARY 2007

Bond Pad Design With Low Capacitance in CMOS
Technology for RF Applications

Yuan-Wen Hsiao, Student Member, IEEE, and Ming-Dou Ker, Senior Member, IEE

Abstract—A new bond pad structure in CMOS technology
with low capacitance for gigahertz radio frequency applications
is proposed. Three kinds of inductors stacked under the pad are
used in the proposed bond pad structure. Experimental results
have verified that the bond pad capacitance is reduced due to
the cancellation effect provided by the inductor embedded in
the proposed bond pad structure. The new proposed bond pad
structure is fully process-compatible to general CMOS processes
without any extra process modification.

Index Terms—Bond pad, capacitance, loss, radio frequency
integrated circuit (RF IC).

fanjx

有没有意思啊

asic_ant

竟然是篇论文，LZ欺骗了我的感情

semico_ljj

"IEEE ELECTRON DEVICE LETTERS, VOL. 28, NO. 1, JANUARY 2007"注明的很明显了!

wanchang

很好哦

wfcawy

good things

donnie

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zying

Thanks

yleagle

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pedro888

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thanks..........................................................