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Ming-Dou Ker 柯明道教授2007年最新ESD论文!
Overview on ESD protection design for mixed-voltage I/O interfaces
with high-voltage-tolerant power-rail ESD clamp circuits
in low-voltage thin-oxide CMOS technology
Abstract
Electrostatic discharge (ESD) protection design for mixed-voltage I/O interfaces has been one of the key challenges of system-on-achip
(SOC) implementation in nanoscale CMOS processes. The on-chip ESD protection circuit for mixed-voltage I/O interfaces should
meet the gate-oxide reliability constraints and prevent the undesired leakage current paths. This paper presents an overview on the design
concept and circuit implementations of ESD protection designs for mixed-voltage I/O interfaces with only low-voltage thin-oxide CMOS
transistors. Especially, the ESD protection designs for mixed-voltage I/O interfaces with ESD bus and high-voltage-tolerant power-rail
ESD clamp circuits are presented and discussed.
2006 Elsevier Ltd. All rights reserved. |
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