请上传Design of a process and temperature compensated CMOS ring osc谢谢。

hi_china59

请上传Design and realization of a process and temperature compensated CMOS ring oscillator 谢谢。

Design and realization of a process and temperature compensated CMOS ring oscillator
Date of Conference: 16-18 May 2012
http://ieeexplore.ieee.org/document/6254225/

Abstract:
This paper describes the design and realization of a process and temperature compensated CMOS ring oscillator. The proposed circuit employs a current-starved ring oscillator with a compensated bias circuit, which generates an adaptive control voltage to maintain a fixed oscillation frequency against temperature and process variations. Simulation results using process parameters from a 0.18-μm CMOS technology and 1.8-V power supply voltage showed that the worst-case frequency variation of 4.49% and 2.29% could be obtained at the oscillation frequencies of 100 MHz and 150 MHz, respectively, over the temperature range of - 40°C to 125°C. The overall circuit consumes 437μW at 100MHz and 537μW at 150MHz.

QQben

谢谢分享

elwin_huxr

见附件

vincenth

thanks for your sharing!

dcircuit

thanks

cdting

非常感謝~~~~

tingyc

thanks

smaa

thanks~

hi_china59

回复 3# elwin_huxr

非常感謝~~~~

sunil4u

Thanks