【gmid 系列】关于gmid方法的曲线提取方法以及一个小例子

我为自己袋盐

关于gmid的准确性与否关键在于如何提取gmid曲线。提取gmid曲线方法目前来看公分为两种，第一种 Semi-empirical gm=ID sizing method 第二种 Model-driven method；目前很多paper里面使用的是第一种方法，但是他们都有提到以后第二种方法可能会变成主流。下面我就将这两种方法总结一下，如果有不对的地方敬请大家批评指正；这些也是我从一片一片paper里面找到的，然后总结到一起；

Semi-empirical gm=ID sizing  method: derives the transconductance over drain current ratio from  experimental ID (VGS) characteristics. The currents stored in look-up tables are the  result of measurements carried out on real transistors whose width file:///C:/Users/Anthony/AppData/Local/Temp/msohtmlclip1/01/clip_image002.png and gate length file:///C:/Users/Anthony/AppData/Local/Temp/msohtmlclip1/01/clip_image004.png are known a priori. The  drain currents may be derived also from advanced models such as BSIM or PSP for these allow reconstructing drain currents that are very  close to real drain currents.

Model-driven method:  makes use of analytical expressions for file:///C:/Users/Anthony/AppData/Local/Temp/msohtmlclip1/01/clip_image006.png.It requires having  at one’s disposal an accurate large signal model that lends itself to analytical  expressions. The basic E.K.V. model leads to analytic expressions of the  transconductance over drain current ratio. Unfortunately, it is not a good  candidate for it is too basic to take into consideration important second  order effects like threshold voltage roll-off, D.I.B.L, gate length  modulation etc that plague real MOS transistors. The semi-empirical method  does not suffer of this drawback of course

最后奉献自己用第一种方法提取curve而完成的一个小例子，希望能够帮助大家；
gmid example.pdf (601.61 KB, 下载次数: 801 )

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markhorrow

非常感谢提供！

Jason_ke

這是未來設計方式嗎?? 下來看看..

asu2011

kankan

15682018281

好東西, 感謝大大的分享

liuminghang1993

thx~~

iyahsue

gooooooooooooooooooooooooood

jeffej

关于gmid方法的曲线提取方法以及一个小例子

ttliu

谢谢分享。

sujy

回复 1# 我为自己袋盐


  感謝