One more addition:
in PMOS mobility fluctuation due to carrier interactions with lattice fluctuation is more dominant than carrier fluctuation in NMOS. but this effect is much insignificant, which leads to less flicker noise in PMOS. of course, if PMOS is buried-channel device, flicker noise is more dramatically reduced.
use physic viewopint to interpretate miller effect :
because the millier cap output node experience a negative -A*delta(Vin)
It means the cap will extract more current Cc*(1+A)*delta(Vin) than Cc*delta(Vin) for input node
That's why the effect cap is Cc(1+A).