"Process HJ" high speed, suitable for RF

gnoc · 发表于 2014-3-13 17:14:37

马上注册，结交更多好友，享用更多功能，让你轻松玩转社区。

您需要登录才可以下载或查看，没有账号？注册

x

本帖最后由 gnoc 于 2014-3-13 17:16 编辑

This paper describes "Process HJ" a new high speed,
low power complementary bipolar technology suitable for
RF applications, which features high frequency NPN and
PNP transistors of 30GHz and 20GHz, respectively. The
technology uses fully isolated double polysilicon selfaligned
architecture and 0.6μm emitters. Resistors,
capacitors, inductors and 3 levels of metallisation are also
incorporated.