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本帖最后由 gnoc 于 2014-3-13 17:16 编辑
This paper describes "Process HJ" a new high speed,
low power complementary bipolar technology suitable for
RF applications, which features high frequency NPN and
PNP transistors of 30GHz and 20GHz, respectively. The
technology uses fully isolated double polysilicon selfaligned
architecture and 0.6μm emitters. Resistors,
capacitors, inductors and 3 levels of metallisation are also
incorporated.
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