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发表于 2014-10-21 11:53:06
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In p-substrate-based Bipolar–CMOS–DMOS (BCD) tech-
nologies, driving a drain of a DMOS transistor below the
substrate potential results in the injection of electrons, i.e., mi-
nority carriers, into the substrate. Due to long minority-carrier
lifetime, they can diffuse laterally over significant distances and
reach regions of the chip far away from the source of injection.
There, they can be collected by an arbitrary reverse-biased
n-region which could be part of a device in a sensitive circuit
[1]. The situation can be depicted as in Fig. |
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