博士论文Advanced Gate Materials and Processes for Sub-70 nm CMOS Technology

xhwubai

[dissertation]Advanced Gate Materials.rar (1.47 MB, 下载次数: 210 )

2012-3-28 23:28 上传

点击文件名下载附件

by
Pushkar Sharad Ranade
B.E. (University of Pune, India) 1996
M.S. (University of California, Berkeley) 1998
A dissertation submitted in partial satisfaction of the requirements
for the degree of
Doctor of Philosophy
in
Engineering – Materials Science and Engineering
in the
GRADUATE DIVISION
of the
UNIVERSITY OF CALIFORNIA, BERKELEY
Committee in charge:
Professor Tsu-Jae King, Co-Chair
Professor Timothy D. Sands, Co-Chair
Professor Ronald Gronsky
Professor Chenming Hu
Fall 2002

xhwubai

Chapter 1 Introduction………………………………………………………….………...1
1.1 Historical Perspective………………………………………………………………1
1.2 Advanced Gate Electrode Materials………………………………………………...7
1.3 Ultra-shallow Junction Formation………………………………………………….8
1.4 Organization………………………………………………………………….…...10
1.5 References………………………………………………………………………...11
Chapter 2 Metal Gate CMOS Technology……………………………………………..13
2.1 Introduction………………………………………………………………………13
2.2 Selection of Materials……………………………………………………………...18
2.3 Candidate Materials……………………………………………………………….20
2.3.1 Physical Properties…………………………………………………….…………..20
2.3.2 Sheet Resistance……………………………………………………………….…..23
2.3.3 Work Function……………………………………………………………………23
2.4 Metal Gate/High-k Gate Dielectric Integration…………………………………...25
2.5 Process Integration………………………………………………………………..27
2.5.1 Dual Metal Gate CMOS Technology…………………………………….………..28
2.5.2 Metal Interdiffusion Gate (MIG) CMOS Technology……………………………..31
2.6 Summary………………………………………………………………………….32
2.7 References………………………………………………………………………...34
Chapter 3 Metal Gate Work Function Engineering…………………………………...37
3.1 Introduction………………………………………………………………………37
3.2 Approaches to Work Function Engineering………………………………………37
3.2.1 Structural Modification……………………………………………………………38
3.2.2 Chemical Modification……………………………………………………………46
3.3 Summary………………………………………………………………………….57
3.4 References………………………………………………………………………...58
Chapter 4 Molybdenum Gate FET Fabrication……………………………………….59
4.1 Introduction………………………………………………………………………59
4.2 Molybdenum Gate Ultra-thin body (UTB) FETs……………………………….…60
4.3 Molybdenum Gate FinFETs………………………………………………...…….65
4.4 Dielectric Reliability after N Implantation………………………………………....68
4.4.1 Experiment………………………………………………………………………..68
4.4.2 Results and Discussion……………………………………………………………69
4.5 Summary………………………………………………………………………….79
4.6 References………………………………………………………………………...80
Chapter 5 SiGe Ultra-Shallow Junction Technology…………………………………..82
5.1 Introduction………………………………………………………………………82
5.2 Si1-xGex/Si p+/n Heterojunctions : Electrical and Materials Characterization……85
5.2.1 Ge+ Ion Implantation…………………...………………………………..………..85
5.2.2 Selective Ge Deposition and Interdiffusion ………………………………………88
5.3 Elevated S/D PMOSFETs Formed by Selective Ge Deposition………………….92
5.3.1 Device Fabrication Process……………………………………………………….92
5.3.2 Transistor Performance………………………………………………….………..96
5.4 Additional Motivation for SiGe S/D MOSFETs………………………………....100
5.4.1 Low Temperature Dopant Activation……………………………………………100
5.4.2 Contact Resistance……………………………………………………………….104
5.5 Summary………………………………………………………………………....105
5.6 References……………………………………………………………………….107
Chapter 6 Conclusion………………………………………………………………….110
6.1 Summary………………………………………………………………………....110
6.1.1 Metal Gate Materials and Process Integration……………………………………110
6.1.2 Ultra-Shallow Junction Formation……………………………………………….111
6.2 Contributions……………………………………………………………………112
6.3 Suggestions for Future Work…………………………………………………….114
6.4 Bibliography……………………………………………………………………..118
Appendix
Process Flow for Metal Gate Capacitor Formation………………………………………121

ghost08

这么好的资料要顶一下！！！

feigekuaipao

学习学习啊

frank15963

感谢分享

Ryggeor

thnx!

fwutsairlin

thank for sharing

tgvcat

Thank you for your sharing

chunjiantan

顶起来，很好的资料

doueer

回复 1# xhwubai


   多谢分享