100信元跪求论文 "Thermally-driven motion of current filaments ..."

analogmind · 发表于 2012-3-21 12:06:19

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"Thermally-driven motion of current filaments in ESD protection devices"

D. Poganya,

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,

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,
S. Bychikhina,
M. Denisonb,
P. Rodinc,
N. Jensenb,
G. Groosd,
M. Stecherb,
E. Gornika

a Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria
b Infineon Technologies, Balanstrasse 73, D-81541 Munich, Germany
c Ioffe Physicotechnical Institute, Politechnicheskaya 26, 194021 St. Petersburg, Russia
d University of Armed Forces, 85579 Neubiberg, Germany

http://www.sciencedirect.com/science/article/pii/S0038110104003624

phdseeker · 发表于 2012-3-22 06:56:34

Thermally-driven motion of current filaments in ESD protection devices.pdf (735.82 KB, 下载次数: 18 )

analogmind · 发表于 2012-3-22 12:24:07

phdseeker 发表于 2012-3-22 06:56

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大哥实在是太感谢了。
昨天我还发了两篇文章的求助帖，你可能没有看到。我再把文章贴在这里。你看看能否帮我下载到，多谢了！

"Studies of EOS susceptibility in 0.6 μm nMOS ESD I/O protection structures "

Carlos H. Díaz

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, a,
Charvaka Duvvuryb,
Sung-Mo Kangc

a Integrated Circuits Business Division, Technology Development Center, Hewletr-Packard Co., 3500 Deer Creek Road, MS26-U8, Palo Alto, CA 94303-0867, USA
b Texas Instruments Incorporated, Semiconductor Process Design Center, M/S 461, P.O. Box 655012, Dallas, TX 75265, USA
c University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, 1308 West Main Street, Urbana, IL 61801, USA

Received 29 October 1993. Accepted 13 April 1994. Available online 12 February 2003.

http://www.sciencedirect.com/science/article/pii/0304388694900353

"Electrical Overstress Power Profiles: A Guideline to Qualify EOS Hardness of Semiconductor Devices"