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40Gb/s Amplifier and ESD Protection Circuit in 0.18µm CMOS Technology 2004
by
Sherif Galal, Behzad Razavi
University of California, Los Angeles, CA
来源：ISSCC 2004 / SESSION 26 / OPTICAL AND FAST I/O / 26.6
论文前两端：
Optical systems operating at 40 Gb/s require broadband amplifiers
and ESD protection circuits in both the receive and transmit
paths. This paper describes an amplifier design that can precede
or follow an equalizer in the receiver or act as a predriver in
the transmitter front end. An ESD circuit is also presented that
can be used for input or output nodes of 40Gb/s circuits.
While distributed circuits have been considered as an attractive
candidate for high-speed amplification, several issues make their
realization in CMOS technology difficult. First, since the bias currents
of all stages flow through the same loads, the circuit suffers
from a severe trade-off between voltage gain and voltage headroom,
especially if MOSFETs are biased at a high current to maximize
their fT. Second, the loss of transmission lines in CMOS
processes limits the number of sections that can be added to the
amplifier. Third, the finite output resistance of short-channel
transistors yields additional loss in the output transmission line.
[ 本帖最后由 semico_ljj 于 2006-11-23 08:57 编辑 ] |
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eetop公众号
创芯大讲堂
创芯人才网
发表于 2006-11-23 08:56:17
不是很冬夜