ESD protection diodes for high-speed IO applications

semico_ljj

Study of intrinsic characteristics of ESD protection diodes for high-speed I/O applications

a b s t r a c t

To meet the desired electrostatic discharge (ESD) robustness, ESD diodes was added into the I/O cells of
integrated circuits (ICs). However, the parasitic capacitance from the ESD diodes often caused degradation
on circuit performance, especially in the high-speed I/O applications. In this work, two modified layout
styles to effectively improve the figures of merits (FOMs) of ESD protection diodes have been
proposed, which are called as multi-waffle and multi-waffle-hollow layout styles. Experimental results
in a 90-nm CMOS process have confirmed that the FOMs (RON  CESD, ICP/CESD, VHBM/CESD, and ICP/ALayout)
of ESD protection diodes with new proposed layout styles can be successfully improved.

2011 Elsevier Ltd. All rights reserved.

juhao0122

Thanks for your sharing!

ysliu168

Thanks!

sunjimmy

Good ESD paper from Dr. MD Ker
Thanks for sharing

过路心客

福昕阅读器打不开，一Open就退出？？？

roger_cht

semico_ljj

回复 6# 过路心客
好像没有这个问题啊

fixit

good!

过路心客

公司的福昕阅读器有问题，打不开，拿回家就好了。
谢谢！

great602

thanks!