再送一本好書:ESD in Silicon Integrated Circuits (Second Edition)

freebirdlee

好书,顶!!

viewsult

wonderful,great support

semico_ljj

很全面，较新的书，不错！

semico_ljj

Preface
In the seven years since the first edition of this book was completed, Electrostatic
Discharge (ESD) phenomena in integrated circuits (IC) continues to be important
as technologies shrink and the speed and size of the chips increases. The phenomena
related to ESD events in semiconductor devices take place outside the realm of
normal device operation. Hence, the physics governing this behavior are not typically
found in general textbooks on semiconductors. Similarly the circuit design
issues involve nonstandard approaches that are not covered in general books on
electronic design. There has been a large amount of work done in the areas of
ESD circuit design and the physics involved, most of which has been published
in a number of papers and conference proceedings. This book covers the stateof-
the-art in circuit design for ESD prevention as well as the device physics, test
methods, and characterization. We also include case studies showing examples of
approaches to solving ESD design problems.
For the second edition, we have completely revised a number of chapters and
brought other chapters up to date with the latest learning. The last seven years have
seen many developments in the understanding of ESD phenomenon and the issues
related to circuit and transistor design, as well as to modeling and simulation.

semico_ljj

The book is intended for those working in the field of IC circuit design and transistor
device design. In addition, the basics presented in this book should also appeal
to graduate students in the field of semiconductor reliability and device/circuit modeling.
As the problems associated with ESD become significant in the IC industry
the demand for graduates with a basic knowledge of ESD phenomena also increases.
We hope that this book will help students meet the demands of the IC industry in
terms of understanding and approaching ESD problems in semiconductor devices.
There are many companies and research institutes that have made it possible to
understand and solve the majority of ESD problems in ICs. Some of the companies
that have been particularly active in recent years are Texas Instruments, Philips
Semiconductors, Lucent, Rockwell, IBM, Motorola, DEC/Compaq, David Sarnoff
Labs, and Intel. Research Institutes that have made significant contributions in
recent years are Sandia National Labs, Clemson University, Stanford University,
the University of California in Berkeley, the University of Western Ontario in
Canada, the University of Illinois at Urbana-Champain, Twente University in The
Netherlands, the Technical University of Munich and the Fraunhofer Institute both
in Germany, and IMEC in Belgium.
We have many people to thank for their contributions to our personal knowledge
and understanding in this area.We would particularly like to thank Robert Rountree,

Thomas Polgreen, and Amitava Chatterjee for their contributions both at the circuit
design and at the device level. Ping Yang and William Hunter have provided
excellent technical guidance during the evolution of the work on ESD, and without
their management support this work would not have been undertaken in the first
place. Many of our colleagues here at Texas Instruments have done the groundwork,
which has helped us expand our understanding in this area. We are especially
grateful for the contributions of Kuen-Long Chen, David Scott, Vikas Gupta, Mike
Chaine, Karthik Vasanth, Vijay Reddy, Tom Diep, Steve Marum, and Julian Chen,
in this respect. In the area of device physics and modeling, the contributions of
Mi-Chang Chang, Kartikeya Mayaram, Jue-Hsien Chern and Jerold Seitchik have
been invaluable. We have had the pleasure of working closely with many academic
institutions, and we thank Professors Henry Domingos at Clarkson University, Ken
Goodson, Robert Dutton, Kaustav Banerjee at Stanford University, Chenming Hu at
UC Berkeley, Elyse Rosenbaum and Steve Kang at University of Illinois at Urbana-
Champain, and Jan Verweij, and Fred Kuper at the University of Twente, for their
collaboration over the years. We greatly appreciate the significant contributions that
Carlos Diaz and Sridhar Ramaswamy (University of Illinois at Urbana-Champain),
Kaustav Banerjee (UC Berkeley), Xin Yi Zhang (Stanford), Sungtaek Ju (Stanford),
and Gianluca Boselli (University of Twente), during their PhD studentships, have
made to our understanding of the many issues related to ESD in silicon integrated
circuits.
Ajith Amerasekera
Charvaka Duvvury
Dallas, November 2001.

ioyoue

真是一本好书,我找了好久了!

Avalon

这书还不错

angelchz

好书啊，呵呵

aszx

thank you

ponderboy

好书,顶!