在线咨询
eetop公众号 创芯大讲堂 创芯人才网
切换到宽版

EETOP 创芯网论坛 (原名:电子顶级开发网)

手机号码,快捷登录

手机号码,快捷登录

找回密码

  登录   注册  

快捷导航
搜帖子
EETOP诚邀模拟IC相关培训讲师 创芯人才网--重磅上线啦!
查看: 1829|回复: 1

[求助] native channel和implant adjust channel的区别

[复制链接]
发表于 2011-10-28 20:15:10 | 显示全部楼层 |阅读模式

马上注册,结交更多好友,享用更多功能,让你轻松玩转社区。

您需要 登录 才可以下载或查看,没有账号?注册

x
弱问,看见文章里说,native channel的device的噪声性能优于implant adjust channel的,不知道这两分别指的是什么沟道类型,为什么native的要好一些呢,期待大侠解惑~~~
发表于 2011-10-31 12:19:04 | 显示全部楼层
Native channel refers to MOSFETs built with intrisic threshold without threshold adjustment step. MOSFET intricsic threshold depends on the the flatband voltage of the MOS capacitor and the difference of the work functions of the gate/substrate material. For example, the intrisic threshold for an poly-gate NMOS could be as low as zero or tens of millivolts. To make a practical MOSFET, additional step (typically done by Ion implantation) is needed to bring this threshold to around, for example, 600mV. Ion implantation is a brutal process which damages the crystal structure of the channel, even after annealing, there would still some crystal structure defects expected, which will distrub an even current flow, increase the noise of the device.
您需要登录后才可以回帖 登录 | 注册

本版积分规则

关闭

站长推荐 上一条 /1 下一条


小黑屋| 手机版| 关于我们| 联系我们| 隐私声明| EETOP 创芯网
( 京ICP备:10050787号 京公网安备:11010502037710 )

GMT+8, 2025-1-9 16:17 , Processed in 0.013033 second(s), 6 queries , Gzip On, Redis On.

eetop公众号 创芯大讲堂 创芯人才网
快速回复 返回顶部 返回列表