|
马上注册,结交更多好友,享用更多功能,让你轻松玩转社区。
您需要 登录 才可以下载或查看,没有账号?注册
x
在Data Sheet中是这么描述的:
A0~A12 Address inputs provide the row address for ACTIVE commands, and the column address and auto precharge bit(A10) for READ/WRITE commands, to select one location out of the memory arry in the respective bank. A10 smpled during a PRECHARGE applies to one bank(A10 LOW, bank selected by BA0, BA1) or all banks(A10 HIGH). The address inputs also provide the op-code during a LOAD MODE REGISTER command.
也就是说,A0~A9,A11~A12共12位复用行地址和列地址,通过CAS和RAS信号来区分当前输入的是行还是列。A10是预充电的控制位。但是行、列地址是否都要用12bit来表示?记得以前看过DDR SDRAM资料说行数比列数多得多,这样的话地址是怎么分配的? |
|