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发表于 2011-6-7 16:14:36
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Stanford University EE311 Course PPT
本帖最后由 suk.qi 于 2011-6-7 16:22 编辑
Prof. Krishna Saraswat from
Department of Electrical Engineering
Stanford University
Stanford, CA 94305
saraswat@stanford.edu
EE311
2010-01-26 15:17 2,558,385 04Apr23 Stanford class - Gate_Dielectric (EOT ~ 20% TOX, Id∝Q_V, Oxide degrading Mechanism).pdf
2010-01-26 15:20 4,655,395 04Apr23 Stanford class - Gate_Dielectric (SiO2 - SiON in NH3_N2O_NO, high~K).pdf
2010-01-26 14:30 2,061,515 04Apr23 Stanford class - IBM_Silicides_Mann.pdf
2010-01-26 14:29 2,318,494 04Apr23 Stanford class - Interconnection Silicides (same as polycides - salicides and metal gate).pdf
Stanford Process (FEOL - BEOL).part1.rar
(13.83 MB, 下载次数: 321 )
2010-01-26 14:32 4,167,067 04Apr23 Stanford class - Interconnections -Copper & Low K Dielectrics (low RC delay, good EM, T↓t↑Gsize↑rho↓u↑).pdf
2010-01-26 14:32 3,823,128 04Apr23 Stanford class - Interconnections -Copper & Low K Dielectrics.pdf
2010-01-26 14:39 2,281,859 04Apr23 Stanford class - Low Power CMOS Process Technology (SS-leak, SiON, μ-Strained Liner, Hybrid Orientation, Wf, BTB, Halo, MG, SOI, FinFET, k~2.4,Tcap).pdf
2010-01-26 14:30 3,770,604 04Apr23 Stanford class - Polycides, Salicides & Metal gate (segregation, diffusion and consumption).pdf
Stanford Process (FEOL - BEOL).part2.rar
(13.83 MB, 下载次数: 325 )
2010-01-26 14:28 60,367 04Apr23 Stanford class - Scaling trends forthe on-chip power modeling (Interconnection, Logic, Memory, Leakage and clock).pdf
2010-01-26 15:19 6,527,050 04Apr23 Stanford class - Trends (α-scaling, Nanoscale, High-k, DG-FinFET, Isolation, Backend 3-D).pdf
2010-01-26 14:28 146,127 04Apr23 Stanford class - TSUPREM4_Slides.pdf
2010-01-26 15:15 73,400 04Apr23 Stanford class - USING TSUPREM-IV IN SWEET HALL.pdf
2011-06-02 10:48 2,049,187 20110531_工艺_Integrated circuit isolation technologies.pdf
2011-06-02 11:21 5,872,403 20110531_技术_Future Devices (Heterostructure_DG MOSFET_Center Channel DG-FET, HEMT, I-MOS) - 3.pdf
2011-06-02 11:21 10,421,107 20110531_技术_Future Devices (Organic FETs,Molecular FET, Schottky SD Nanotube FETs) - 2.pdf
2011-06-02 10:49 4,475,088 20110531_技术_Future Devices (UTPDSOI, Non Planar MOSFETs, GeMOS - u3900, Egmin -Ileak_high) - 1.pdf
2011-06-02 11:21 2,786,302 20110601_工艺_Interconnect Al (Mechanical properties, EM minimized@GB, Air-Gap).pdf
2011-06-02 11:22 2,751,613 20110601_工艺_Interconnect Low k (weak polarization - nonpolar low-dielectric, minimize the moisture, Porous Materials).pdf
2011-06-02 11:21 4,745,335 20110601_工艺_Interconnect Scaling (Multilayer, HF - Skin Effect, Delay, Resistivity, Thermal, Low-k).pdf
2011-06-02 11:21 5,162,860 20110601_工艺_Shallow Junctions Slides (OED_ORD_TED, I↑V↓,defect ED in POLY several times faster, PAI, Bandgap Engineering, cl0_d0).pdf |
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