《Drain Extended NMOS High Current Behavior and ESD Protection Strategy for HV Applications in Sub-100nm CMOS Technologies 》 This paper appears in:Reliability physics symposium, 2007. proceedings. 45th annual. ieee international Issue Date: 15-19 April 2007 On page(s): 342 - 347 Location: Phoenix, AZ Print ISBN: 1-4244-0919-5 INSPEC Accession Number: 9508169 Digital Object Identifier: 10.1109/RELPHY.2007.369913 Date of Current Version: 11 六月 2007
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