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发表于 2011-4-17 03:50:33
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Contents
Preface xi
1 Introduction 1
1.1 Latchup Overview 1
1.2 Background of TLU 7
1.3 Categories of TLU-Triggering Modes 7
1.3.1 Power-On Transition 7
1.3.2 Transmission Line Reflections 8
1.3.3 Supply Voltage Overshoots 11
1.3.4 Cable Discharge Event 12
1.3.5 System-Level ESD Event 13
1.4 TLU Standard Practice 16
References 19
2 Physical Mechanism of TLU under the System-Level ESD Test 23
2.1 Background 23
2.2 TLU in the System-Level ESD Test 24
2.3 Test Structure 26
2.4 Measurement Setup 28
2.5 Device Simulation 30
2.5.1 Latchup DC I–V Characteristics 32
2.5.2 Negative VCharge 32
2.5.3 Positive VCharge 35
2.5.4 A More Realistic Case 37
2.6 TLU Measurement 38
2.6.1 Latchup DC I–V Characteristics 38
2.6.2 Negative VCharge 39
2.6.3 Positive VCharge 39
2.7 Discussion 41
2.7.1 Dominant Parameter to Induce TLU 41
2.7.2 Transient Responses on the Minority Carriers Stored
within the SCR 43
2.8 Conclusion 44
References 44
3 Component-Level Measurement for TLU under System-Level
ESD Considerations 47
3.1 Background 47
3.2 Component-Level TLU Measurement Setup 48
3.3 Influence of the Current-Blocking Diode and Current-Limiting
Resistance on the Bipolar Trigger Waveforms 49
3.3.1 Positive VCharge 51
3.3.2 Negative VCharge 51
3.4 Influence of the Current-Blocking Diode and Current-Limiting
Resistance on the TLU Level 54
3.4.1 Latchup DC I–V Characteristics 54
3.4.2 Positive TLU Level 55
3.4.3 Negative TLU Level 57
3.5 Verifications of Device Simulation 59
3.5.1 Dependences of the Current-Blocking Diode on TLU Level 59
3.5.2 Dependences of Current-Limiting Resistance on TLU Level 62
3.6 Suggested Component-Level TLU Measurement Setup 62
3.7 TLU Verification on Real Circuits 63
3.8 Evaluation on Board-Level Noise Filters to Suppress TLU 66
3.8.1 TLU Transient Waveforms of the Ring Oscillator 69
3.8.2 TLU Level of the Ring Oscillator with Noise Filters 70
3.9 Conclusion 72
References 73
4 TLU Dependency on Power-Pin Damping Frequency and Damping
Factor in CMOS Integrated Circuits 75
4.1 Examples of Different DFreq and DFactor in the System-Level
ESD Test 76
4.2 TLU Dependency on DFreq and DFactor 80
4.2.1 Relations between DFactor and Minimum Positive
(Negative) VP to Initiate TLU 80
4.2.2 Relations between DFreq and Minimum Positive (Negative)
VP to Initiate TLU 82
4.2.3 Relations between DFactor and Minimum (Maximum) DFreq
to Initiate TLU 84
4.3 Experimental Verification on TLU 86
4.4 Suggested Guidelines for TLU Prevention 89
4.5 Conclusion 92
References 93
5 TLU in CMOS ICs in the Electrical Fast Transient Test 95
5.1 Electrical Fast Transient Test 95
5.2 Test Structure 98
5.3 Experimental Measurements 102
5.3.1 Negative EFT Voltage 103
5.3.2 Positive EFT Voltage 104
5.3.3 Physical Mechanism of TLU in the EFT Test 105
5.4 Evaluation on Board-Level Noise Filters to Suppress
TLU in the EFT Test 106
5.4.1 Capacitor Filter, LC-Like Filter, and p-Section Filter 106
5.4.2 Ferrite Bead, TVS, and Hybrid Type Filters 109
5.4.3 Discussion 111
5.5. Conclusion 112
References 112
6 Methodology on Extracting Compact Layout Rules for
Latchup Prevention 113
6.1 Introduction 113
6.2 Latchup Test 114
6.2.1 Latchup Testing Classification 114
6.2.2 Trigger Current Test 115
6.2.3 Vsupply Over-Voltage Test 117
6.3 Extraction of Layout Rules for I/O Cells 121
6.3.1 Latchup in I/O Cells 121
6.3.2 Design of Test Structure for I/O Cells 124
6.3.3 Latchup Immunity Dependency of I/O Cells 125
6.4 Extraction of Layout Rules for Internal Circuits 129
6.4.1 Latchup in Internal Circuits 129
6.4.2 Design of Test Structure for Internal Circuits 130
6.4.3 Latchup Immunity Dependency of the Internal Circuits 131
6.5 Extraction of Layout Rules between I/O Cells and
Internal Circuits 136
6.5.1 Layout Considerations between I/O Cells and Internal Circuits 136
6.5.2 Design of Test Structure between I/O Cells and Internal
Circuits 139
6.5.3 Threshold Latchup Trigger Current Dependency 141
6.6 Conclusion 148
References 149
7 Special Layout Issues for Latchup Prevention 151
7.1 Latchup between Two Different Power Domains 151
7.1.1 Practical Examples 152
7.1.2 Suggested Solutions 156
7.2 Latchup in Internal Circuits Adjacent to Power-Rail ESD
Clamp Circuits 156
7.2.1 Practical Examples 157
7.2.2 Suggested Solutions 159
7.3 Unexpected Trigger Point to Initiate Latchup in Internal Circuits 159
7.3.1 Practical Examples 161
7.3.2 Suggested Solutions 165
7.4 Other Unexpected Latchup Paths in CMOS ICs 165
7.5 Conclusion 167
References 168
8 TLU Prevention in Power-Rail ESD Clamp Circuits 169
8.1 In LV CMOS ICs 169
8.1.1 Power-Rail ESD Clamp Circuits 171
8.1.2 TLU-Like Issues in LV Power-Rail ESD Clamp Circuits 174
8.1.3 Design of TLU-Free Power-Rail ESD Clamp Circuits 183
8.2 In HV CMOS ICs 189
8.2.1 High-Voltage ESD Protection Devices 190
8.2.2 Design of TLU-Free Power-Rail ESD Clamp Circuits 197
8.3 Conclusion 204
References 205
9 Summary 207
9.1 TLU in CMOS ICs 207
9.2 Extraction of Compact and Safe Layout Rules for Latchup
Prevention 209
Appendix A: Practical Application—Extractions of Latchup Design
Rules in a 0.18-mm 1.8 V/3.3V Silicided CMOS Process 211
A.1 For I/O Cells 211
A.1.1 Nomenclature 211
A.1.2 I/O Cells with Double Guard Rings 212
A.1.3 I/O Cells with a Single Guard Ring 215
A.1.4 Suggested Layout Rules for I/O Cells 221
A.2 For Internal Circuits 223
A.2.1 Nomenclature 223
A.2.2 Design of Test Structures 223
A.2.3 Latchup Immunity Dependency of Internal Circuits 224
A.2.4 Suggested Layout Rules for Internal Circuits 226
A.3 For between I/O and Internal Circuits 226
A.3.1 Nomenclature 226
A.3.2 I/O and Internal Circuits (SCR) 227
A.3.3 I/O and the Internal Circuits (Ring Oscillator) 233
A.3.4 Suggested Layout Rules for between I/O and the
Internal Circuits 235
A.4 For Circuits across Two Different Power Domains 237
A.4.1 Nomenclature 237
A.4.2 Design of Test Structures 237
A.4.3 Latchup Immunity Dependency between Two Different
Power Domains 241
A.4.4 Suggested Layout Rules between Two Different Power
Domains 242
A.5 Suggested Layout Guidelines 244
A.5.1 Latchup Design Guidelines for I/O Circuits 244
A.5.2 Latchup Design Guidelines for between I/O and the
Internal Circuits 245
A.5.3 Latchup Design Guidelines for Internal Circuits 246
A.5.4 Latchup Design Guidelines for Circuits across Two
Different Power Domains 246
Index 247 |
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