【ECPE】求文章：ECPE Tutorial “Power Semiconductor Devices & Technologies”

suk.qi

ECPE Tutorial “Power Semiconductor Devices & Technologies”4 – 5 December 2008 Nuremberg, Germany

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【原文】 The tutorial starts with the presentation of relevant basic principles of modern power semiconductor devices:
a) Blocking capability of the devices, unipolar and bipolar current transport and gate control will be discussed.
b) Diodes, MOS transistors (including Cool MOS) and IGBTs will be treated in detail including their dynamical properties, safe operation and temperature limits. As a consequence, the benefits expected from wide band gap semiconductors (SiC, GaN) will be discussed.
c) This introductory part is also the base for the next part devoted to power device models and the increasing role of virtual prototyping in power electronics.
d) The following chapters will demonstrate the state-ofthe art and development lines of monolithic smart power devices and intelligent IGBT control circuits.
e) Finally a short overview of hybrid power electronic integration and the most relevant aspects (cooling, reliability and EMC problems) will be presented.
This tutorial is aimed at engineers who are engaged in power electronics and want to improve their knowledge and understanding of power devices including the developments expected in near future.
The course instructor is Prof. Dieter Silber (University of Bremen), Co-instructors are Dr. Peter Tuerkes (Infineon Technologies, Munich) and Dr. Reinhard Herzer (Semikron, Nuremberg).
All presentations and discussions will be in English.

nwpuzhoukun

望分享，期待

adc9a6

thanks for sharing

campionii2002

xiexie

isamue

tong qiu ..........

s030119

是什么，一本书吗？

s030119

明白了，是seminar 论文集，找到上传

quhuaibo

good material