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Scaling (“More Moore”)—
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Geometrical (constant field) Scaling—refers to the continued shrinking of horizontal and vertical physical feature sizes of the on-chip logic and memory storage functions in order to improve density (cost per function reduction) and performance (speed, power) and reliability values to the applications and end customers.
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Equivalent Scaling (occurs in conjunction with, and also enables, continued geometrical scaling)—refers to 3-dimensional device structure (“Design Factor”) improvements plus other non-geometrical process techniques and new materials that affect the electrical performance of the chip.
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Design Equivalent Scaling (occurs in conjunction with equivalent scaling and continued geometric scaling)—refers to design technologies that enable high performance, low power, high reliability, low cost, and high design productivity.
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“Examples (not exhaustive) are: design-for-variability; low power design (sleep modes, hibernation, clock gating, multi-Vdd, etc.); and homogeneous and heterogeneous multi-core SOC architectures.”
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Addresses the need for quantifiable, specific design technologies that address the power and performance tradeoffs associated with meeting “More Moore” functionality needs; and may also drive “More Moore” architectural functionality as part of the solution to power and performance needs.
Functional Diversification (“More than Moore”)—the incorporation into devices of functionalities that do not necessarily scale according to “Moore's Law,” but provides additional value to the end customer in different ways. The “More-than-Moore” approach typically allows for the non-digital functionalities (e.g., RF communication, power control, passive components, sensors, actuators) to migrate from the system board-level into a particular package-level (SiP) or chip-level (SoC) potential solution.
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Design technologies enable new functionality that takes advantage of More than Moore technologies.
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“Examples (not exhaustive) are: Heterogeneous system partitioning and simulation; software; analog and mixed signal design technologies for sensors and actuators; and new methods and tools for co-design and co-simulation of SIP, MEMS, and biotechnology.”
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Addresses the need for design technologies which enable functional diversification
Beyond CMOS—emerging research devices (ERD) and Materials (ERM), focused on a “new switch” used to process information, typically exploiting a new state variable to provide functional scaling substantially beyond that attainable by ultimately scaled CMOS. Substantial scaling beyond CMOS is defined in terms of functional density, increased performance, dramatically reduced power, etc. The “new switch” refers to an “information processing element or technology,” which is associated with compatible storage or memory and interconnect functions.
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Examples of Beyond CMOS include: carbon-based nano-electronics, spin-based devices, ferromagnetic logic, atomic switches, and nano-electro-mechanical-system (NEMS) switches. |
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