求助：偏置电路计算问题

zhouskill · 发表于 2009-12-25 17:17:32

.....

mingli741 · 发表于 2009-12-26 13:28:00

学习了　谢谢

sjxu007 · 发表于 2009-12-26 15:35:21

简单来说就是M1和M3的Vgs一样但Vds不一样。短沟道效应是Ids3<Ids5。

hi_china59 · 发表于 2009-12-26 20:44:21

本帖最后由 hi_china59 于 2009-12-29 15:44 编辑

Allen Wide Swing Current Mirror
M1 1 4 GND GND NMOS1 L=1U W=4U M=1
M2 2 3 1 GND NMOS1 L=1U W=4U M=1
M3 6 4 GND GND NMOS1 L=1U W=4U M=1
M4 3 3 GND GND NMOS1 L=1U W=1U M=1
M5 4 3 6 GND NMOS1 L=1U W=4U M=1
IBIAS1 5 3 10U
IBIAS2 5 4 10U
VOUT 2 GND DC 3V
VPLUS 5 GND DC 5V
.dc VOUT 0 5 0.01
.probe i1(m1)
.op
.MODEL NMOS1 NMOS VTO=0.70 KP=110U GAMMA=0.4 LAMBDA=0.04 PHI=0.7
+MJ=0.5 MJSW=0.38 CGBO=700P CGSO=220P CGDO=220P CJ=770U CJSW=380P
+LD=0.016U TOX=14N
.end

g9213706 · 发表于 2009-12-31 01:58:43

do you have think about bady effect?
i think you should add the effect to caculatior it .

[求助] 求助：偏置电路计算问题

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