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A Review of MOS Device Physics(By Thomas Lee)
Introduction:
This chapter focuses attention on those aspects of transistor behavior that are of immediate
relevance to the RF circuit designer. Separation of first-order from higher-order phenomena
is emphasized, so there are many instances when crude approximations are presented
in the interest of developing insight. As a consequence, this review is intended as a supplement
to, rather than a replacement for, traditional rigorous treatments of the subject. In
particular, we have to acknowledge that today’s deep-submicron MOSFET is so complex
a device that simple equations cannot possibly provide anything other than first-order
(maybe even zeroth-order) approximations to the truth. The philosophy underlying this
chapter is to convey a simple story to enable first-pass designs, which are then verified by
simulators using much more sophisticated models. Qualitative insights developed with the
aid of the zeroth-order models enable the designer to react appropriately to bad news from
the simulator. We design with a simpler set of models than we use for verification. |
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创芯大讲堂
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发表于 2006-8-9 08:48:54
