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Design of High-Voltage-Tolerant ESD Protection Circuit in Low-Voltage CMOS Processes
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 9, NO. 1, MARCH 2009
Ming-Dou Ker, Fellow, IEEE, and Chang-Tzu Wang, Student Member, IEEE
Abstract—Two new electrostatic discharge (ESD) protection
design by using only 1 × VDD low-voltage devices for mixedvoltage
I/O buffer with 3 × VDD input tolerance are proposed.
Two different special high-voltage-tolerant ESD detection circuits
are designed with substrate-triggered technique to improve ESD
protection efficiency of ESD clamp device. These two ESD detection
circuits with different design concepts both have effective
driving capability to trigger the ESD clamp device on. These ESD
protection designs have been successfully verified in two different
0.13-μm 1.2-V CMOS processes to provide excellent on-chip ESD
protection for 1.2-V/3.3-V mixed-voltage I/O buffers.
Index Terms—Electrostatic discharge (ESD), low-voltage
CMOS, mixed-voltage I/O, substrate-triggered technique. |
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