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精彩大放送:最新IEEE JSSC 2009年1月全体论文奉上!

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发表于 2009-2-10 16:17:15 | 显示全部楼层 |阅读模式

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几个月不冒泡了,出来给大家贡献点资料,希望能够喜欢。

做咱这一行的,JSSC的NB大家想必都是清楚的了,好了,闲话少说言归正传吧!

PS:JSSC的Issue 1一般以microprocessor,memory为主,需要的就赏个脸瞅瞅吧!~我给出论文题名和概要,大家各取所需吧。

1    2 GHz 2 Mb 2T Gain Cell Memory Macro With 128 GBytes per sec Bandwidth in a 65 nm Logic Process Technology

Abstract—We present 2Mb 2T PMOS gain cell macro on 65 nm
logic process that has high bandwidth of 128 GBytes/sec, fast cycle
time of 2 ns and 6-clock cycles access time at 2 GHz. Macro features
a full-rate pipelined architecture, ground precharge bitline, nondestructive
read-out, partial write support and 128-row refresh to
tolerate short refresh time. Cell is 2X denser than SRAM and is
voltage compatible with logic.

abbr_0d79324e56067df0538a6e11b7a9484f.pdf (3.83 MB, 下载次数: 265 )

第二页还有7篇,需要的就看看吧~

[ 本帖最后由 corespirit36 于 2009-2-10 22:36 编辑 ]
 楼主| 发表于 2009-2-10 16:20:18 | 显示全部楼层
2      A 3.8 GHz 153 Mb SRAM Design With Dynamic Stability Enhancement and Leakage Reduction in 45 nm High-k Metal Gate CMOS Technology

Abstract—A high-performance low-power 153 Mb SRAM is
developed in 45 nm high-k Metal Gate technology. Dynamic
SRAM PMOS forward-body-bias (FBB) and Active-Controlled
SRAM VCC in Sleep are integrated in the design to lower Active-
VCCmin and Standby Leakage, respectively. FBB improves
the Active-VCCmin by up to 75 mV, and Active-Controlled SRAM
VCC distribution tightened by 100 mV, both of which result in
further power reduction. A 0.346 m􀀀 6T-SRAM bit-cell is used
which is optimized for VCCmin, performance, leakage and area.
The design operates at high-speed over a wide voltage range,
and has a maximum frequency of 3.8 GHz at 1.1 V. The 16 KB
Subarray was also used as the building block in on-die 6 MB
Cache for Intel Core 2 Duo CPU in 45 nm technology.

abbr_8d028dcb8aa9bcc51e9229cbd15b3c56.pdf (2.29 MB, 下载次数: 154 )

可能是由于文件名过长,上传后乱码了,大伙看到的附件名可能不对,没关系,下载后改过来就可以了。
 楼主| 发表于 2009-2-10 16:25:33 | 显示全部楼层
3       A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB per s Write Rate

Abstract—A 16 Gb 8-level NAND flash chip on 56 nm CMOS
technology has been fabricated and is being reported for the
first time. This is the first 3-bit per cell (X3) chip published with
All-Bitline (ABL) architecture, which doubles the write performance
compared with conventional shielded bitline architecture.
A new advanced cache program algorithm provides another 15%
improvement in write performance. This paper also discusses a
technique for resolving the sensing error resulting from CELL
source line noise, which usually varies with the data pattern. The
new architecture and advanced algorithm enable an 8 MB/s write
performance that is comparable to previously published 2-bit per
cell (4-level) NAND performance. Considering the significant cost
reduction compared to 4-level NAND flash based on the same
technology, this chip is a strong candidate for many mainstream
applications.

abbr_93a5e0b6e584104d64a5d7c59fcc8ed5.pdf (2.9 MB, 下载次数: 111 )



4      A 34 MB per s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology

Abstract—A 16 Gb 4-state MLC NAND flash memory augments
the sustained program throughput to 34 MB/s by fully
exercising all the available cells along a selected word line and by
using additional performance enhancement modes. The same chip
operating as an 8 Gb SLC device guarantees over 60 MB/s programming
throughput. The newly introduced All Bit Line (ABL)
architecture has multiple advantages when higher performance
is targeted and it was made possible by adopting the “current
sensing” (as opposed to the mainstream “voltage sensing”) technique.
The general chip architecture is presented in contrast to a
state of the art conventional circuit and a double size data buffer
is found to be necessary for the maximum parallelism attained.
Further conceptual changes designed to counterbalance the area
increase are presented, hierarchical column architecture being
of foremost importance. Optimization of other circuits, such as
the charge pump, is another example. Fast data access rate is
essential, and ways of boosting it are described, including a new
redundancy scheme. ABL contribution to energy saving is also
acknowledged.

abbr_5515e9d7312096ca267ceaf10498e2e9.pdf (2.67 MB, 下载次数: 107 )
 楼主| 发表于 2009-2-10 16:29:44 | 显示全部楼层
5       A 52 uW Wake-Up Receiver With -72 dBm Sensitivity Using an Uncertain-IF Architecture

Abstract—A dedicated wake-up receiver may be used in wireless
sensor nodes to control duty cycle and reduce network latency.
However, its power dissipation must be extremely low to minimize
the power consumption of the overall link. This paper describes
the design of a 2 GHz receiver using a novel “uncertain-IF” architecture,
which combines MEMS-based high-Q filtering and a
free-runningCMOSring oscillator as theRF LO. The receiver prototype,
implemented in 90 nm CMOS technology, achieves a sensitivity
of 72 dBm at 100 kbps (􀀀 􀀀 bit error rate) while consuming
just 52 W from the 0.5 V supply.
A 52 uW Wake-Up Receiver With -72 dBm Sensitivity Using an Uncertain-IF Architecture.pdf (976.76 KB, 下载次数: 109 )

6      A 65 nm 2-Billion Transistor Quad-Core Itanium Processor
Abstract—This paper describes an Itanium processor implemented
in 65 nm process with 8 layers of Cu interconnect. The
21.5 mm by 32.5 mm die has 2.05B transistors. The processor has
four dual-threaded cores, 30 MB of cache, and a system interface
that operates at 2.4 GHz at 105 C. High speed serial interconnects
allow for peak processor-to-processor bandwidth of 96 GB/s and
peak memory bandwidth of 34 GB/s.
A 65 nm 2-Billion Transistor Quad-Core Itanium Processor.pdf (3.22 MB, 下载次数: 101 )
 楼主| 发表于 2009-2-10 16:33:20 | 显示全部楼层
7      A 65 nm Single-Chip Application and Dual-Mode Baseband Processor With Partial Clock Activation and IP-MMU
Abstract—Supporting both WCDMA with HSDPA and GSM/
GPRS/EDGE, the 9.3 9.3mm􀀀 SoC fabricated in triple-Vth 65nm
CMOS, has three CPU cores and 20 separate power domains. Unused
power domains can be powered down to reduce the leakage
power. Partial clock activation scheme especially focused on music
playback scene dynamically stops a PLL and clock trees when not
necessary and reduces power consumption from 33.6 mW to 19.6
mW. IP-MMU translates virtual address to physical address for
18 hardware-IPs and virtual address space can be allocated when
necessary and can be freed after its operation, reducing external
memory by 43 MB. Video performance of D1 (720 520) size with
30 frames per second for MPEG/AVC decoding and encoding can
be achieved under mixed virtual and physical address usage.

abbr_5a6d88d227882d601346c9ec9d339cf5.pdf (1.72 MB, 下载次数: 104 )

8       A 65 nm Sub-Vt Microcontroller With Integrated SRAM and Switched Capacitor DC-DC Converter
Abstract—Aggressive supply voltage scaling to below the device
threshold voltage provides significant energy and leakage
power reduction in logic and SRAM circuits. Consequently, it is a
compelling strategy for energy-constrained systems with relaxed
performance requirements. However, effects of process variation
become more prominent at low voltages, particularly in deeply
scaled technologies. This paper presents a 65 nm system-on-a-chip
which demonstrates techniques to mitigate variation, enabling
sub-threshold operation down to 300 mV. A 16-bit microcontroller
core is designed with a custom sub-threshold cell library
and timing methodology to address output voltage failures and
propagation delays in logic gates. A 128 kb SRAM employs an 8 T
bit-cell to ensure read stability, and peripheral assist circuitry to
allow sub- reading and writing. The logic and SRAM function
in the range of 300 mV to 600 mV, consume 27.2 pJ/cycle at the
optimal 􀀀􀀀 of 500 mV, and 1 W standby power at 300 mV.
To supply variable voltages at these low power levels, a switched
capacitor DC-DC converter is integrated on-chip and achieves
above 75% efficiency while delivering between 10 W to 250 W
of load power.

abbr_3fcdfd28156e84f13c56bf4a89b24a0d.pdf (2.06 MB, 下载次数: 110 )
 楼主| 发表于 2009-2-10 16:39:51 | 显示全部楼层
9       A 320 mV 56 μW 411 GOPS per Watt Ultra-Low Voltage Motion Estimation Accelerator in 65 nm CMOS
Abstract—This paper describes a motion estimation engine
fabricated in 65 nm CMOS, targeted for special-purpose on-die
acceleration of sum of absolute difference (SAD) computation in
real-time video encoding workloads on power-constrained mobile
microprocessors. Four-way speculative difference computation
using dual 4:2 compressors, optimal reuse of sum XOR min-terms
in static 4:2 compressor carry gates, distributed accumulation of
input carries for efficient negation and robust ultra-low voltage
optimized circuits enable peak SAD efficiency of 12.8 macro-block
SADs/nJ within a dense layout occupying 0.089 mm􀀀 while
achieving: (i) scalable performance up to 2.4 GHz, 82 mW measured
at 1.4 V, 50 C, (ii) deep subthreshold operation measured
at 230 mV while operating down to 4.3 MHz and consuming
14.4 W, (iii) maximum energy efficiency of 411 GOPS/Watt by
operating at 320 mV, 23 MHz and consuming 56 W (9.6x higher
efficiency than nominal 1.2 V operation), (iv) 20% higher energy
efficiency for up-conversion of ultra-low voltage signals using a
two-stage cascaded split-output level shifter, and (v) tolerance
of up to 2x process and temperature induced performance
variation using supply voltage compensation of 50 mV.
abbr_be6437216165babb11dfe3a1e089786a.pdf (1.78 MB, 下载次数: 96 )

10      A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage
Abstract—In this paper, a 90-nm 128-Mcell non-volatile memory
based on phase-change Ge2Sb2Te5 alloy is presented. Memory
cells are bipolar selected, and are based on a trench architecture.
Experimental investigation on multi-level cell (MLC) storage
is addressed exploiting the chip MLC capability. To this end, a
programming algorithm suitable for 2 bit/cell storage achieving
tightly placed inner states (in terms of cell current or resistance) is
proposed. Measurements showed the possibility of placing the required
distinct cell current distributions, thus demonstrating the
feasibility of the MLC phase-change memory (PCM) storage concept.
Endurance tests were also carried out. Cumulative distributions
after 2-bit/cell programming before cycling and after 100 k
program cycles followed by 1 h/150 C bake are presented. Experimental
results onMLCendurance are also provided from a 180-nm
8-Mb PCM demonstrator with the same trench cell structure.
A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage.pdf (3.25 MB, 下载次数: 105 )

11      A CMOS Chip With Active Pixel Array and Specific Test Features for Subretinal Implantation
Abstract—This paper presents a CMOS imager chip that is
aimed at subretinal implantation for partially restoring human
vision. It has low supply voltage ( 2 V) and all DC free terminals
for long life wired operation. Stimulation voltage is increased to
approximately 4 Vpp by low voltage drop design. 40 x 40 pixel
cells including light sensors, amplifiers, control logic and electrode
drivers are addressed sequentially to improve power consumption
and spatial resolution of perception. Pad count is limited to 6,
which requires a specific test procedure. The 3 x 3 mm design is
fabricated in a 0.35 m CMOS technology optimized for optical
performance.
abbr_d0fc116b02284131d31f750fda19b158.pdf (3.02 MB, 下载次数: 104 )
 楼主| 发表于 2009-2-10 16:47:43 | 显示全部楼层
12      A Full-Wave Rectifier With Integrated Peak Selection for Multiple Electrode Piezoelectric Energy Harvesters
Abstract—Piezoelectric transducers are a viable way of harvesting
vibrational energy for low power embedded systems such
as wireless sensors. A proposed disk-shaped piezoelectric transducer
with several electrodes enables increased energy harvesting
from multiple mechanical resonances. To rectify the low-frequency
AC voltage from harvested vibrational energy, a full-wave rectifier
has been fabricated in 0.35 m CMOS. Integrated peak selection
circuitry allows input signals with 90 relative phase shift from
the multiple-electrode piezoelectric transducer to be rectified
with reduced output ripple. The rectifier has a measured power
efficiency of 98.3% while delivering 90 W and occupying an
area of 0.007mm2 . This high efficiency further enables energy
harvesters to power wireless devices for extended durations.
abbr_a10e7f937d084ffbd40848385e4472cd.pdf (1.18 MB, 下载次数: 88 )

13      A Fully Performance Compatible 45 nm 4-Gigabit Three Dimensional Double-Stacked Multi-Level NAND Flash Memory With Shared Bit-Line Structure
Abstract—A 3-dimensional double stacked 4 Giga-bit multi-level
cell NAND flash memory device with shared bitline structure
have successfully developed. The device is fabricated by 45 nm
floating-gate CMOS and single-crystal Si layer stacking technologies.
To support fully compatible device performance and
characteristics with conventional planar device, shared bitline
architecture including Si layer-dedicated decoder and Si
layer-compensated control schemes are also developed. By using
the architecture and the design techniques, a memory cell size of
0.0021 um/bit per unit feature area which is smallest cell size
and 2.5 MB/s program throughput with 2 kB page size which is
almost equivalent performance compared to conventional planar
device are realized.
abbr_cfbf3033f6294302dbbeadc5c29188ae.pdf (2.53 MB, 下载次数: 94 )

14      A High-Density 45 nm SRAM Using Small-Signal Non-Strobed Regenerative Sensing
Abstract—High-density SRAMs utilize aggressively small
bit-cells, which are subject to extreme variability, degrading their
read SNM and read-current. Additionally, array performance
is also limited by sense-amplifier offset and strobe-timing uncertainty.
This paper, presents a sense-amplifier that targets all
of these performance degradations: specifically, simple offset
compensation reduces sensitivity to variation while imposing
minimal loading on high-speed nodes; stable internal voltage
references serve as an internal means to self-trigger regeneration
to avoid tracking mismatch in an external strobe-path; precise
small-signal detection withstands small read-currents so that
other bit-cell parameters can be optimized; and single-ended
sensing provides compatibility to asymmetric bit-cells, which can
have improved operating margins. The design is integrated with
a 64-kb high-density array composed of 0.25 m􀀀 6T bit-cells. A
prototype, in low-power 45 nm CMOS, compares its performance
with a conventional sense-amplifier, demonstrating an improvement
of 4X in access-time sigma and 34% in overall worst case
access time.
A High-Density 45 nm SRAM Using Small-Signal Non-Strobed Regenerative Sensing.pdf (1.86 MB, 下载次数: 109 )

15      A Narrowband Multi-Channel 2.4 GHz MEMS-Based Transceiver
Abstract—This paper presents a new radio architecture
targeting RF transceivers for WSN, WBAN, and biomedical applications.
The high miniaturization required by such applications
is achieved thanks to the combination of high- MEMS devices,
such as RF BAW resonators and filters and low frequency silicon
resonators, together with a low-power RF IC. This requires a
dedicated radio architecture accounting for the advantages and
limitations of the MEMS devices. The paper presents such an
architecture together with the design of some ultra-low-power and
MEMS-specific circuits. The new radio is validated by the demonstration
of RX and TX functionalities. The synthesizer, based on
a low phase noise BAW DCO and a variable IF LO obtained by
fractional division from the RF carrier, achieves a phase noise of
113 dBc/Hz at 3 MHz. It can intermittently be locked to a low
frequency reference (e.g. 32 kHz XTAL or thermally compensated
silicon resonator) to correct for the BAW aging and thermal drift
thanks to an ADPLL where the lock state can be memorized for
nearly immediate settling after returning from an idle period. A
sensitivity of 87 dBm is obtained in receive at 100 kbps for a
global power consumption of 6 mA. The transmitter demonstrates
a high data rate quasi-direct 1-point modulation capability with
the generation of a 4 dBm, 1 Mbps, GFSK signal with an overall
current of 20 mA.
A Narrowband Multi-Channel 2.4 GHz MEMS-Based Transceiver.pdf (1.45 MB, 下载次数: 111 )
 楼主| 发表于 2009-2-10 16:58:45 | 显示全部楼层
16       A Resonant Global Clock Distribution for the Cell Broadband Engine Processor
Abstract—Resonant clock distributions have the potential to
save power by recycling energy from cycle-to-cycle while at
the same time improving performance by reducing the clock
distribution latency and filtering out non-periodic noise. While
these features have been successfully demonstrated in several
small-scale experiments, there remained a number of concerns
about whether these techniques would scale to a product application.
By modifying the Cell Broadband Engine Processor to
incorporate a large resonant global clock network, power savings
with full functionality is demonstrated over a 20% range in clock
frequencies, and a 6–8 Watt power savings at 4 GHz. This was
achieved by changing one wiring level and adding an additional
thick copper level to create inductors and capacitors.
A Resonant Global Clock Distribution for the Cell Broadband Engine Processor.pdf (2.71 MB, 下载次数: 78 )

17      A Sub-2 W Low Power IA Processor for Mobile Internet Devices in 45 nm High-k Metal Gate CMOS
Abstract—This paper describes a low power Intel Architecture
(IA) processor specifically designed for Mobile Internet Devices
(MID) with performance similar to mainstream Ultra-Mobile
PCs. The design relies on high residency in a new low-power state
in order to keep average power and idle power below 220 and
80 mW, respectively. The design consists of an in-order pipeline
capable of issuing 2 instructions per cycle supporting 2 threads,
32 KB instruction and 24 KB data L1 caches, independent integer
and floating point execution units, x86 front end execution unit, a
512 KB L2 cache and a 533 MT/s dual-mode (GTL and CMOS)
front-side-bus (FSB). The design contains 47 million transistors in
a die size under 25 mm􀀀 manufactured in a 9-metal 45 nm CMOS
process with optimized transistors for low leakage. Maximum
thermal design power (TDP) consumption is measured at 2 W at
1.0 V, 90 C using a synthetic power-virus test at a frequency of
1.86 GHz.
abbr_a99ee7d8e65ecbe5c9b6b6ace62b7ff3.pdf (3.45 MB, 下载次数: 84 )

18     An 8 Mb SRAM in 45 nm SOI Featuring a Two-Stage Sensing Scheme and Dynamic Power Management
Abstract—This paper describes an 8 Mb SRAM test chip that
has been designed and fabricated in a 45 nm Silicon-On-Insulator
(SOI) CMOS technology. The test chip comprises of sixteen 512
kb instances and is designed for use as the principal compilable
one-port embedded-SRAM block in a 45 nm ASIC library. Challenges
associated with SRAM cell design in SOI are overcome and
resulted in a cell size of 0.315 m􀀀. The paper introduces two circuit
techniques that address the AC and DC power consumption
issues facing today’s embedded-SRAMs. The first technique addresses
AC power dissipation by utilizing a two-stage, body-contacted
sensing scheme that, among other improvements, achieves a
68% improvement in read power under constant voltage and frequency
compared to the previous generation macro [1]. The second
technique addresses the DC power consumption by introducing a
single-device, header based dynamic leakage suppression scheme
that reduces total macro leakage power by 38% with no wake-up
cycle requirements.
abbr_c82ced030d78b90b853de7f6ea13c8d7.pdf (2.08 MB, 下载次数: 81 )

19      An 11 mm2,70 mW Fully Programmable Baseband Processor for Mobile WiMAX and DVB-TH in 0.12um CMOS
Abstract—With the rapid evolution of wireless standards and increasing
demand for multi-standard products, the need for flexible
RF and baseband solutions is growing. Flexibility is required to
be able to adapt to unstable standards and requirements without
costly hardware re-spins, and also to enable hardware reuse between
products and between multiple wireless standards in the
same device, ultimately saving both development cost and silicon
area. In this paper a fully programmable baseband processor suitable
for standards such as DVB-T/H and mobile WiMAX is presented.
The processor is based on the SIMT architecture which utilizes
a unique type of vector instructions to provide processing parallelism
while minimizing the control complexity of the processor.
The architecture has been demonstrated in a prototype chip which
was proven in a complete DVB-T/H system demonstrator.
The chip occupies 11 mm􀀀 in a 0.12 m CMOS process. It
includes 1.5 Mbit of single port SRAM and 200 k logic gates. The
measured power consumption for the highest DVB-T/H data rate
(31.67 MBit/s) is 70 mW at 70 MHz. This outperforms both area
and power figures of previously presented non-programmable
DVB-T/H solutions.
abbr_327456716e62a0bf57698b0d83d4ba0b.pdf (1.94 MB, 下载次数: 78 )

20      Architecture and Physical Implementation of a Third Generation 65 nm, 16 Core, 32 Thread Chip-Multithreading SPARC Processor
Abstract—This third-generation Chip-Multithreading (CMT)
SPARC processor consists of 16 cores with shared memory
architecture and supports a total of 32 main threads plus 32
scout threads. It is targeted for high-performance servers, and is
optimized for both single- and multi-threaded applications. The
396 mm􀀀 chip is fabricated in an 11 metal layer 65-nm CMOS
process and operates at a nominal frequency of 2.3 GHz, consuming
a maximum power of 250W at 1.2 V. This paper provides
an overview of the architectural highlights and describes the
physical implementation challenges and solutions including circuit
innovations in memory arrays, register files, and floating-point
hardware that boost the performance and circuit robustness with
low area overhead.
abbr_a947b38d9b9042789701597983690d9d.pdf (3.47 MB, 下载次数: 90 )

第二页还有剩下的7篇,有兴趣的看看吧~
Enjoy

[ 本帖最后由 corespirit36 于 2009-2-10 17:27 编辑 ]
发表于 2009-2-10 17:13:45 | 显示全部楼层
太棒了!!!
 楼主| 发表于 2009-2-10 17:25:27 | 显示全部楼层
21      Design and Optimization of an HSDPA Turbo Decoder ASIC
Abstract—The turbo decoder is the most challenging component
in a digital HSDPA receiver in terms of computation requirement
and power consumption, where large block size and recursive algorithm
prevent pipelining or parallelism to be effectively deployed.
This paper addresses the complexity and power consumption
issues at algorithmic, arithmetic and gate levels of ASIC design, in
order to bring power consumption and die area of turbo decoders
to a level commensurate with wireless application. Realized in
0.13 m CMOS technology, the turbo decoder ASIC measures
1.2 mm2 excluding pads, and can achieve 10.8 Mb/s throughput
while consuming only 32 mW.
Design and Optimization of an HSDPA Turbo Decoder ASIC.pdf (1.19 MB, 下载次数: 90 )

22      Energy-Efficient and Metastability-Immune Resilient Circuits for Dynamic Variation Tolerance
Abstract—A 65 nm resilient circuit test-chip is implemented
with timing-error detection and recovery circuits to eliminate the
clock frequency guardband from dynamic supply voltage 􀀀􀀀􀀀
and temperature variations as well as to exploit path-activation
probabilities for maximizing throughput. Two error-detection sequential
(EDS) circuits are introduced to preserve the timing-error
detection capability of previous EDS designs while lowering clock
energy and removing datapath metastability. One EDS circuit is a
dynamic transition detector with a time-borrowing datapath latch
(TDTB). The other EDS circuit is a double-sampling static design
with a time-borrowing datapath latch (DSTB). In comparison to
previous EDS designs, TDTB and DSTB redirect the highly complex
metastability problem from both the datapath and error path
to only the error path, enabling a drastic simplification in managing
metastability. From a survey of various EDS circuit options,
TDTB represents the lowest clock energy EDS circuit known;
DSTB represents the lowest clock energy static-EDS circuit with
SER protection known. Error-recovery circuits are introduced to
replay failing instructions at lower clock frequency to guarantee
correct functionality. Relative to conventional circuits, test-chip
measurements demonstrate that resilient circuits enable either
25%–32% throughput gain at equal 􀀀􀀀 or at least 17% 􀀀􀀀
reduction at equal throughput, corresponding to 31%–37% total
power reduction.
abbr_9af595bdc007def6cc126e703a72a074.pdf (1.77 MB, 下载次数: 73 )

23      High Dynamic Range CMOS Imager Technologies for Biomedical Applications
Abstract—Apart from the ongoing debate about usingCMOSactive
pixel sensors (APS) or CCD imagers for today’s consumer and
commercial applications the emerging biomedical market presents
new opportunities to CMOS APS. Logarithmic response High-Dynamic
RangeCMOS(HDRC) cells are the preferred photosensitive
circuits for building sensors with contrast and not with illumination
dominated outputs. Prominent examples addressing distinct
issues in life style and health care are the possibilities to restore vision
through a sub-retinal CMOS imager implant and to fabricate
a low-cost intracorporeal video probe through a miniature CMOS
imager. The sub-retinal imager chip presented here is the first implanted
into the eye of a blind human patient with partial restoring
of vision.
High Dynamic Range CMOS Imager Technologies for Biomedical Applications.pdf (2.6 MB, 下载次数: 92 )

24      iVisual- An Intelligent Visual Sensor SoC With 2790 fps CMOS Image Sensor and 205 GOPS per W Vision Processor
Abstract—Apart from the ongoing debate about usingCMOSactive
pixel sensors (APS) or CCD imagers for today’s consumer and
commercial applications the emerging biomedical market presents
new opportunities to CMOS APS. Logarithmic response High-Dynamic
RangeCMOS(HDRC) cells are the preferred photosensitive
circuits for building sensors with contrast and not with illumination
dominated outputs. Prominent examples addressing distinct
issues in life style and health care are the possibilities to restore vision
through a sub-retinal CMOS imager implant and to fabricate
a low-cost intracorporeal video probe through a miniature CMOS
imager. The sub-retinal imager chip presented here is the first implanted
into the eye of a blind human patient with partial restoring
of vision.
abbr_1735947a32d94d1f30e31138e5b9d064.pdf (1.89 MB, 下载次数: 77 )

25      Low-Power 16 x 10 Gb per s Bi-Directional Single Chip CMOS Optical Transceivers Operating at smaller than 5 mW per Gb per s per link
Abstract—We report here on a parallel optical transceiver based
on a single 0.13 m CMOS amplifier chip with 16 transmitter
and 16 receiver channels. The transceiver is designed to support
very low-power, chip-to-chip optical data buses on printed circuit
boards at data rates up to 10 Gb/s/channel. Optical interfaces to
the chip are provided by 16-channel photodiode (PD) and VCSEL
arrays directly flip-chip soldered to the CMOS IC. The resulting
complete transceivers, or Optochips, are low-cost, low-profile
highly-integrated chip-scale components. The packaging approach,
dense hybrid-integration of optical devices with CMOS,
facilitates further scaling to even larger 2-D arrays for future massively
parallel optical data buses. Comparison with a previously
reported high-speed transceiver Optochip is provided to provide
insight into the design space of dense CMOS-based parallel optical
transceivers.
All of the Optochip transmitter and receiver channels operate at
10 Gb/s for an aggregate bi-directional data rate of 160 Gb/s. Direct
measurements of inter-channel crosstalk at 10 Gb/s indicate negligible
power penalties. The transceiver measures 3.25 5.25 mm
and consumes 708mWof power with all channels fully operational.
The area efficiency achieved by the Optochip is 9.4 Gb/s/mm􀀀 per
link, and the per-bit power consumption of 4.44 mW/Gb/s is unprecedented
for parallel optical modules.

abbr_16d73490897215edbd92024fe3b97f23.pdf (2.7 MB, 下载次数: 81 )

26       RazorII- In Situ Error Detection and Correction for PVT and SER Tolerance
Abstract—Traditional adaptive methods that compensate for
PVT variations need safety margins and cannot respond to
rapid environmental changes. In this paper, we present a design
(RazorII) which implements a flip-flop with in situ detection
and architectural correction of variation-induced delay errors.
Error detection is based on flagging spurious transitions in the
state-holding latch node. The RazorII flip-flop naturally detects
logic and register SER. We implement a 64-bit processor in
0.13 m technology which uses RazorII for SER tolerance and
dynamic supply adaptation. RazorII based DVS allows elimination
of safety margins and operation at the point of first failure
of the processor. We tested and measured 32 different dies and
obtained 33% energy savings over traditional DVS using RazorII
for supply voltage control. We demonstrate SER tolerance on the
RazorII processor through radiation experiments.

RazorII- In Situ Error Detection and Correction for PVT and SER Tolerance.pdf (2.59 MB, 下载次数: 97 )

27      Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process
Abstract—Capacitive measurement of very small displacement
of nano-electro-mechanical systems (NEMS) presents some issues
that are discussed in this article. It is shown that performance is
fairly improved when integrating on a same die the NEMS and
CMOS electronics. As an initial step toward full integration, an
in-plane suspended gate MOSFET (SGMOSFET) compatible with
a front-end CMOS has been developed. The device model, its fabrication,
and its experimental measurement are presented. Performance
obtained with this device is experimentally compared to the
one obtained with a stand-alone NEMS readout circuit, which is
used as a reference detection system. The 130nmCMOSASIC uses
a bridge measurement technique and a high sensitive first stage to
minimize the influence of any parasitic capacitances.
abbr_24ce6db8176a709fdb9a46a83189b87b.pdf (3.68 MB, 下载次数: 94 )
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