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Purpose
• To explain the basic principles of the charge pumping
technique for characterising the interface charge in
MOSFET’s
• To illustrate the application of the technique for the analysis
of the degradation of MOSFET’s and MOS-related devices,
for energy and spatial profiling of interface traps
• To discuss the effect of oxide thickness scaling and how
Charge pumping can successfully be used for analysing
high k dielectrics
• Targeting both novices as well as experts in the field
[ 本帖最后由 xhwubai 于 2008-12-20 14:09 编辑 ] |
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发表于 2008-12-20 14:06:14
