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brief introduction：
This book details many of the key issues associated with the scaling to nano-dimensions of silicon-on-insulator (SOI) structures. It offers new insight particularly at the device/circuit interface as appropriate for SOI which is fast becoming a mainstream technology. Coverage examines mobility degradation in SOI films less than about 5nm as well as atomistic level effects. In addition, the book presents results for Monte Carlo and drift/diffusion modeling together with device compact models and circuit level simulation, which provides for a broad exposure of the problems from intrinsic physics to the circuit level. The book also examines scaling to nano-dimensions, from both technological and physics aspects, and considers the scope of potential applications for quantum dots, quantum wires and nanotubes. The use of semiconductor materials other than Si, on insulator, is featured in some sections of the book. The potential of III/V, Ge and other materials to facilitate continuation down the roadmap is illustrated by a review of the state-of-the-art.
October 2006, Springer. |
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eetop公众号
创芯大讲堂
创芯人才网
发表于 2008-11-27 10:39:16
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