国庆送书系列：RF 书籍专辑

luoyih

第六部分

luoyih

第三本

Author(s): Mike Golio
Publisher: CRC
Date     : 2007
Pages    : 736
Format   : PDF
OCR      : Y
Quality  :
Language :
ISBN     : 0849372208

Product Description
In the high frequency world, the passive technologies required to realize RF and microwave functionality present distinctive challenges. SAW filters, dielectric resonators, MEMS, and waveguide do not have counterparts in the low frequency or digital environment. Even when conventional lumped components can be used in high frequency applications, their behavior does not resemble that observed at lower frequencies. RF and Microwave Passive and Active Technologies provides detailed information about a wide range of component technologies used in modern RF and microwave systems.
Updated chapters include new material on such technologies as MEMS, device packaging, surface acoustic wave (SAW) filters, bipolar junction and heterojunction transistors, and high mobility electron transistors (HMETs). The book also features a completely rewritten section on wide bandgap transistors.
Part of the second edition of the best-selling "RF and Microwave Handbook", this convenient and sharply focused guide examines the latest passive and active technologies that rely on RF and microwave technology. The growth of wireless technology over the past decade has been enormous, and this carefully edited book discusses the latest developments and technologies impacting the wireless field. Heavily updated chapters include new material on such technologies as MEMS, device packaging, Surface Acoustic Wave (SAW) filters, bipolar junction and heterojunction transistors, and High Mobility Electron Transistors (HMETs). The book also features a completely rewritten section on wide bandgap transistors.
Product Details
Contents
1 Overview of Microwave Engineering
SECTION I Passive Technologies
2 Passive Lumped Components
3 Passive Microwave Devices
4 Dielectric Resonators
5 RF MEMS
6 Surface AcousticWave (SAW) Filters
7 RF Coaxial Cables
8 Coaxial Connectors
9 Antenna Technology
10 Phased Array Antenna Technology
11 The Fresnel-Zone Plate Antenna
12 RF Package Design and Development
SECTION II Active Device Technologies
13 Varactors
14 Schottky Diode Frequency Multipliers
15 Transit Time Microwave Devices
16 Bipolar Junction Transistors (BJTs)
17 Heterostructure Bipolar Transistors (HBTs)
18 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
19 RFCMOS Modeling and Circuit Applications
20 Metal Semiconductor Field Effect Transistors
21 High Electron Mobility Transistors (HEMTs)
22 Nitride Devices
23 Microwave Vacuum Tubes
24 Monolithic Microwave IC Technology
25 Bringing RFICs to the Market
SECTION III Materials Properties
26 Metals
27 Dielectrics
28 Ferroelectrics and Piezoelectrics
29 Material Properties of Semiconductors
Appendix A: Mathematics, Symbols, and Physical Constants
Appendix B:Microwave Engineering Appendix

luoyih

第二部分

luoyih

第三部分

luoyih

第四部分

luoyih

第五部分

luoyih

第六部分

luoyih

第七部分

luoyih

第八部分

luoyih

Author(s): Anna Rudiakova
Publisher: Springer
Date     : 2006
Pages    : 136
Format   : PDF
OCR      : Y
Quality  :
Language :
ISBN     : 1402046383
Product Description
Whether you are a researcher, or practising engineer, or even non-familiar with power amplifiers student, it is a good idea to look into Advanced Design Techniques for RF Power Amplifiers.
Its main aim is to provide the reader with a deep analysis of theoretical aspects, modelling, and design strategies of RF high-efficiency power amplifiers. Advanced Design Techniques for RF Power Amplifiers begins with an analytical review of current state of the problem. Then it moves to the theoretical analysis of BJT class-F power amplifier near transition frequency and presents the necessary realization conditions. The next part concerns the practical verification and demonstration of the theoretical results. It is followed by the part devoted to the output networks of high-efficiency power ampifiers. The novel type of photonic band-gap structure providing improved characteristics both in the pass and stop bands is proposed. Finally, the fifth-harmonic peaking class F power amplifier design based on the above structure is presented.
Advanced Design Techniques for RF Power Amplifiers can be used as a guide by scientists and engineers dealing with this subject and as a text book to graduate and postgraduate students. The latter will find the comprehensive nonlinear power amplifiers simulation tutorial in the Appendix. It provides an excellent quick start for beginners, although the main contents is intended for a skilled reader.
Product Details
1 Introduction to the RF Power Amplifiers Design
2 Theoretical Analysis of BJT Class-F Power Amplifier
3 BJT Class-F power Amplifier Design
4 PBG Structure as Amplifier Output Network
5 BJT Fifth-Harmonic Peaking Class F Power Amplifier