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发表于 2008-7-18 00:47:00
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Part9
这次的压缩包里只有一篇Paper,下面是Title
A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB per s Read Throughput
Abstract-A 512 Mb diode-switch PRAM has been developed
in a 90 nm CMOS technology. The vertical diode-switch using
the SEG technology has achieved minimum cell size and disturbance-
free core operation. A core configuration, read/write
circuit techniques, and a charge-pump system for the diode-switch
PRAM are proposed. The 512 Mb PRAM has achieved read
throughput of 266 MB/s through the proposed schemes. The
write throughput was 0.54 MB/s in internal x2 write mode, and
increased to 4.64 MB/s with x16 accelerated write mode at 1.8 V
supply.
memory_9.rar
(4.44 MB, 下载次数: 38 )
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