用ise_tcad仿真的时候出现的问题，请教各位大神？求解决方案

hexintong2009

仿真

我在用ISE——TCAD仿真的时候出现下列错误，请哪位帮忙解释下呗

hexintong2009

源程序如下
Title('diode')
Grid(X(-4,4) Y(-3,0) ,Nx=8)
Substrate(element=P,concentration=5e15,orientation=100)
Graphic=(triangle=on,plot)
Replace(Control(Ngra=8))
deposit(material=OX,thickness=0.3)
Mask(material=resist,thickness=800nm,x(-4,-2,-0.5,4))
Etching(material=OX,stop=sigas,rate(aniso=100nm/min))
Implant(element=B,dose=2e15,energy=80kev,tilt=0)
Etching(material=resist,rate(aniso=100))
Diffusion(time=20min,temperature=1000,atmosphere=N2)
comment("Fabrication of electrode")
Deposit(material=AL,thickness=0.2)
Mask(material=resist,thickness=800nm,x(-2,-0.5))
Etching(remove=0.2,material=AL,rate(aniso=100))       
Etching(material=resist,rate(aniso=100))
1D(file=pside,Xsection(-1.0), species(Ptotal, Btotal,netactive), fac=-1,append=on)
1D(file=nside,Xsection(2.0),species(Ptotal),fac=-1,append=on)
Save(file=diode)
Save(file=‘diode’,type=MDRAW, synonyms(Al=metal)
Contacts(contact1(name='anode',-2,-0.5)
         contact2(name='cathode',location=bottom))
MinElementWidth=0.02,MaxElementWidth=0.1
MinElementHeight=0.02,MaxElementHeight=0.1)
End