LDMOSFETs with Uneven Racetrack Source for PDP Driver Application

suk.qi · 发表于 2008-7-3 10:00:23

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Improvement of Breakdown characteristics of LDMOSFETs with Uneven Racetrack Source for PDP Driver Application:
ABSTRACT¾ We investigated the electrical characteristics
of p-channel double-diffused MOSFETs (p-LDMOSFETs) with
an uneven racetrack source (URS) and a conventional
racetrack source (CRS) for PDP driver IC applications. The
breakdown voltage of the p-LDMOSFET with the URS in offstate
was nearly the same as the p-LDMOSFET with the CRS.
However, the breakdown voltage of the p-LDMOSFET with the
URS in on-state was about 30% higher than that of the p-
LDMOSFET with the CRS, while the saturated drain current
of the p-LDMOSFET with the URS was only about 4% lower
than that of the p-LDMOSFET with the CRS.

[ 本帖最后由 suk.qi 于 2008-7-3 13:15 编辑 ]

3518905 · 发表于 2009-6-20 10:52:57

好东西呀，谢谢LZ了

3518905 · 发表于 2009-6-20 10:54:04

好东西呀，谢谢LZ了

pickpunk · 发表于 2009-6-20 15:06:11

LDMOS, 不错

bardeen · 发表于 2009-9-9 10:53:43

PDP is popular several years ago, but now few company is doing it

yadingfenfen · 发表于 2010-11-7 00:34:20

cxvvvvvvvvvvv

bhtom58 · 发表于 2011-4-28 01:09:39

Thanks.

gouleb1 · 发表于 2011-7-4 07:33:45

thank you very much ..

q0w1e2r3_2007 · 发表于 2012-7-13 13:37:51

good paper, thx

LDMOSFETs with Uneven Racetrack Source for PDP Driver Application

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