关于mismatch的两篇文章

vincentren · 发表于 2008-1-22 11:16:17

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两篇关于MOS Mismatch的文章

ez123 · 发表于 2008-1-22 15:30:55

3q3q3q

ez123 · 发表于 2008-1-22 15:31:50

tingting

ssdd_yy · 发表于 2008-1-22 17:11:55

好东西谢谢！！！

lurx0022 · 发表于 2008-1-22 17:25:34

thank you

XD0909 · 发表于 2008-1-22 17:36:02

好东西谢谢！！！

semico_ljj · 发表于 2008-1-23 21:44:55

Understanding MOSFET Mismatch
for Analog Design

Patrick G. Drennan, Member, IEEE, and Colin C. McAndrew, Senior Member, IEEE

semico_ljj · 发表于 2008-1-23 21:45:53

CONCLUSION
Accurate mismatch modeling is needed to avoid parametric
yield loss and overdesign. The common approach to MOSFET
mismatch modeling, based on and , leads to inaccurate predictions
over geometry and bias. Mismatch modeling based on
physical process parameters is significantly more accurate.
In addition, because the approach is based on physical
uncorrelated process parameters, the characterization procedure
identifies the parameters that have the greatest contribution
to mismatch. This helps process technologists identify key
areas to work on when trying to optimize a process for best
mismatch.