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发表于 2011-4-19 19:22:00
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For high-frequency / high-speed circuits, the parasitics make simulation results a lot different.
For the simulation of ESD and I/O cells, since the drain-side layout is subject to ESD design rule, the parasitcs make a lot differences, too.
Without the correct AS, AD, PS, PD, the calculation of diode capacitance are much smaller.
For HV ESD cells, the drain-side RS and RD significantly increase the total RDS(ON). |
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