IEEE(1985)带隙经典论文CMOS Voltage References Using Lateral Bipolar Transistors

semico_ljj

IEEE(1985)带隙经典论文CMOS Voltage References Using Lateral Bipolar Transistors
by
MARC G. R. DEGRAUWE, OSKAR N. LEUTHOLD, ERIC A. VITTOZ, MEMBER, IEEE,
HENRI J. OGUEY, MEMBER, IEEE, AND ARTHUR DESCOMBES

Abstract —Two bandgap references are presented which make use of
CMOS compatible lateral bipolar transistors. The circuits are designed to
be insensitive to the low beta and affa current gains of these devices. Their
accuracy is not de~aded by any amplifier offset.
‘The first reference has an intrinsic low output impedance. Experimental
results yield an output voltage which is constant within 2 mV, over the
commercial temperature range (0-70° C), when all the circuits of the same
batch are trimmed at a single temperature. The load regulation is 3.5
pV/VA and the Power Supply Rejection Ratio (PSRR) at 100 Hz is 60 dB.
Measurements on a second reference yield a PSRR of minimum 77 dB
at 100 Hz. Temperature behavior is identical to the first circuit presented.
This circuit reqnires a supply voltage of only 1.7 V.

很好的设计思想！！！

[ 本帖最后由 semico_ljj 于 2006-10-18 13:19 编辑 ]

semico_ljj

自己顶！！

semico_ljj

Two bandgap references are presented which make use of
CMOS compatible lateral bipolar transistors. The circuits are designed to
be insensitive to the low beta and affa current gains of these devices. Their
accuracy is not de~aded by any amplifier offset.

Avalon

帮楼主顶了

milk

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semico_ljj

自己的东东自己顶！！！

ADS998

谢谢楼主，顶

xileito

good paper
i help you

wzh27

晕，已经下过啦，浪费了...