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发表于 2008-9-9 22:03:03
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Abstract
This thesis will treat the use of Gallium-Nitride High Electron Mobility Transistor
(GaN-HEMT) devices in the Current Mode Class-D (CMCD) architecture
and further on analyze the impact of the extremely low parasitic elements in
the GaN HEMT structure, compared to LDMOS, which is the most common
technology for RF power semiconductors today.
Two different amplifiers were designed, simulated, built and analyzed. In
both cases there was a lack of an existing transistor model, thus one had to be
fabricated by the author. In a later state of the project, an ADS-model was
received from Eudyna, from which additional transistor data were extracted. A
lot of additional research was done for modeling purposes trough literature and
articles.
All models, simulations and layouts were done in ADS 2005A. And as you
soon will see, a Power Added Efficiency (P.A.E) of 71 % was demonstrated at
an output power level of 51.1 W, with a Drain Efficiency of 78 %, which is at the
moment the highest published level of efficiency achieved in class D operation at
this level of output power and frequency. This thesis have been prepared using
LATEX2". |
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