『三味书屋』元旦送礼之六：著名的Kluwer丛书系列 Volume 675～759

benemale

	The Piezojunction Effect in Silicon Integrated Circuits and Sensors Series: The Springer International Series in Engineering and Computer Science , Vol. 682 Fruett, Fabiano, Meijer, Gerard C.M. 2002, 176 p., Hardcover ISBN: 978-1-4020-7053-2 Ships in 3 - 5 business days
	$144.00

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About this book
Mechanical stress affects the magnitude of base-emitter voltages of forward biased bipolar transistors. This phenomenon is called the piezojunction effect. The piezojunction effect is the main cause of inaccuracy and drift in integrated temperature sensors and bandgap voltage references. The aim of The Piezojunction Effect in Silicon Integrated Circuits and Sensors is twofold. Firstly, to describe techniques that can reduce the mechanical-stress-induced inaccuracy and long-term instability. Secondly, to show, that the piezojunction effect can be applied for new types of mechanical-sensor structures. During IC fabrication and packaging thermo-mechanical stress is induced, when the packaged chips cool down to the temperature of application.
The piezojunction effect is caused by a stress-induced change in the conductivity of the minority-charge carriers, while the piezoresistive effect is caused by a similar effect for the majority-charge carriers. To characterise the anisotropic piezojunction effect, the authors performed systematic investigations over wide ranges of mechanical stress and temperature. The experiments have been performed for various crystal and stress orientations. The experimental results have been used to extract the first- and second-order piezojunction (FOPJ and SOPJ) coefficients for bipolar transistors.
It is shown how the knowledge of the piezojunction and piezoresistive coefficients can used to minimize the undesirable mechanical-stress effects on the electrical characteristics of transistors and resistors, respectively. Devices with lower mechanical-stress sensitivity can be found by comparing their piezo-coefficients. The layout of the device can also be optimized to reduce the mechanical-stress sensitivity.
As a next step it is shown, how the knowledge of the piezo-effects on device level can be used to predict and to reduce their negative influence on circuit level. This is demonstrated for a number of important basic circuits, including translinear circuits, temperature transducers and bandgap references.
Finally, it is shown how the piezojunction effect can be used to fabricate stress-sensing elements. It appears that, in comparison with resistive stress-sensing elements, the piezojunction sensors have the advantage of a smaller size and very low power dissipation.

[ 本帖最后由 benemale 于 2008-1-5 08:19 编辑 ]

benemale

	Multi-Standard CMOS Wireless Receivers: Analysis and Design Series: The Springer International Series in Engineering and Computer Science , Vol. 675 Xiaopeng Li, Ismail, Mohammed 2002, 168 p., Hardcover ISBN: 978-1-4020-7032-7 This item usually ships in 2-3 business days
	$149.00

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Wireless communications is witnessing tremendous growth with proliferation of different standards covering wide, local and personal area networks (WAN, LAN and PAN). The current trends calls for designs that allow:

• Smooth migration to future generations of wireless standards with higher data rates for multimedia applications;
• Convergence of wireless services allowing access to different standards from the same wireless device;
• Cost effective design solutions for intercontinental roaming.

This requires designs that work across multiple wireless standards, can easily be reused, achieve maximum hardware share at minimum power consumption levels particularly for mobile battery-operated devices. While serious efforts are currently underway to develop highly integrated solutions for digital basebands covering multiple standards, today's emerging multi-standard, multi-band wireless devices use "stacked" transceivers, i.e. separate transceivers for different standards. This represents a major bottleneck in attempting to achieve higher levels of integration and reduce the bill of material for a multi-standard wireless device. Development of radio architectures and mixed-signal design solutions that support multiple standards is therefore needed. This is on of the main objectives of this book.
Multi-Standard CMOS Wireless Receivers: Analysis and Design is the first book on the subject of multi-standard wireless receivers. It covers both the analysis and design aspects of CMOS radio receivers with primary focus on receivers for mobile terminals. The subject of multi-standard data converter design for base stations is also covered. The book is the first to detail a complete analysis of a multi-standard receiver chain from the antenna to the data converter establishing the design specifications of all blocks in both the radio and mixed-signal parts. The specifications are conveniently tabulated throughout the book and span a level of details from the noise figure and linearity requirements of RF blocks down to such circuit details as, e.g., DC gain, settling behavior, noise and matching requirements of amplifiers (OTAs) in the data converter.
Multi-Standard CMOS Wireless Receivers: Analysis and Design serves as a reference for RF IC and mixed-signal designers, wireless receiver system designers, design managers and project leaders in industry, particularly those in the wireless semiconductor industry.

Written for:
RF IC and mixed-signal designers, wireless receiver system designers, design managers, project leaders in industry, particularly wireless semiconductor industry

[ 本帖最后由 benemale 于 2008-1-5 00:35 编辑 ]

benemale

先把楼层占了，有空再来更新吧，祝大家新年快乐~~~~~~

nesta

你从那里能登上这些出版社啊
太牛了

wangjin0215

等待中

wangqian0818

只有介绍，没有附件可供下载呀？

lc13

谢谢楼主！！好东西 ！！

wangqian0818

期待中

zhanweisu27

你是光你是电你是唯一的神话

zhanweisu27

不过得把附件加上啊