current reference circuit

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Please upload the following paper
"A process and temperature compensated current reference circuit in CMOS process"
By Marshnil Dave, Maryam Shojaei Baghini, Dinesh Kumar Sharma

Microelectronics Journal

Volume 43, Issue 2

, February 2012, Pages 89-97


Abstract

A novel current reference circuit that compensates for process and temperature variations without any extra trimming is proposed in this paper. Four thousand Monte Carlo simulations show that the maximum % error (deviation from the desired value) in the reference current is ±5.07% considering process variations (die-to-die, wafer-to-wafer and batch-to-batch). Considering process variations and temperature change from 0 °C to 100 °C both, the maximum error in the reference current is±8.56%. The proposed circuit has been fabricated in 180 nm CMOS process. Measurement results on 50 dice at room temperature show that the mean of the proposed reference current is 9.39% away from its designed value. Mean of drain current of a fixed biased MOSFET fabricated in the same run is 35.41% away from its designed value. Measurements at four different temperatures, 27 °C, 50 °C, 75 °C and 100 °C, on these dice show that the maximum error in the reference current is 17% whereas that in the drain current of a fixed biased MOSFET is 126%. In other words, the proposed current reference circuit reduces the maximum error by a factor of 7 (from 126% to 17%) when process and temperature variations both are considered without trimming. With a simple trimming circuit the maximum variation in the reference current is reduced to ±3.17%

jiaoda

查收下，网上找的

waley

good topic
thank you~

colindeng

感谢分享！

trancongha

thanks

newking1856

thanks

john_123

thanks

skahill

jiaoda 发表于 2022-2-21 21:45
查收下，网上找的

Good, thanks