On-Chip ESD Protection Design

squarewood

abbr_c26777561aac23deef204fec06241ea7.pdf (1.06 MB, 下载次数: 95 )

2007-12-19 10:15 上传

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squarewood

good, thanks very much

eetime999

thanks!!!!!!!!!!!!!!!!

semico_ljj

The same to me!

q22

好东西 ，谢谢

bsimchen

thanks for sharing. but i feel cheated because it is a journal paper, not an e-book

testliu

Abstract—Anew electrostatic discharge (ESD) protection structure
of high-voltage p-type silicon-controlled rectifier (HVPSCR)
that is embedded into a high-voltage p-channel MOS (HVPMOS)
device is proposed to greatly improve the ESD robustness of
the vacuum-fluorescent-display (VFD) driver IC for automotive
electronics applications. By only adding the additional n+ diffusion
into the drain region of HVPMOS, the transmission-linepulsing-
measured secondary breakdown current of the output
driver has been greatly improved to be greater than 6 A in a
0.5-μm high-voltage complementary MOS process. Such ESDenhanced
VFD driver IC, which can sustain human-body-model
ESD stress of up to 8 kV, has been in mass production for automotive
applications in cars without the latchup problem. Moreover,
with device widths of 500, 600, and 800 μm, the machine-model
ESD levels of the HVPSCR are as high as 1100, 1300, and 1900 V,
respectively.
Index Terms—Electrostatic discharge (ESD), high-voltage
p-type silicon-controlled rectifier (HVPSCR), human body model
(HBM), machine model (MM), secondary breakdown current
(It2), vacuum fluorescent display (VFD).

alex_bai

雷镇子

是paper啊，还以为是书