一片paper 应该有指导意义 SIZING OF MOS FOR AMPLIFIER DESIGN

jeffin

This paper presents a design procedure for amplifiers based on a universal model of the MOSFET, valid from weak to strong inversion. A set of very simple expressions allows quick design by hand as well as an evaluation of the design in terms of power consumption and silicon real estate. It is shown that there is an optimum bias in moderate inversion for which the attainable DC gain is maximum. The design and measurements of a commonsource amplifier illustrate the appropriateness of the proposed methodology.

[ 本帖最后由 jeffin 于 2009-9-29 15:28 编辑 ]

woainio

还真以为是一片呢！才一篇阿！

linxiulong

xiexie

fanjx

靠,一样的啊,还白花钱购买

imyp

謝謝分享大大````````````````

icbrl

good  thanks

LAS.xs

kankan

sehilly

what's the difference between this and Dr. Pelgram's paper in 1989 JSSC?

denap

Thanks for sharing!!

luoyih

楼主辛苦了。