求一篇IEEE论文：Reduction of channel hot-electron-generated substrate current in sub-150-nm channel length Si M...

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Reduction of channel hot-electron-generated substrate current in sub-150-nm channel length Si MOSFET's


Page(s): 497 - 499
  
  Date of Publication:Oct. 1988   
      

   ISSN Information:  
     

INSPEC Accession Number: 3291616

DOI:  10.1109/55.17823  
          
  Publisher: IEEE

G.G. Shahidi  


Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
      ;      D.A. Antoniadis        ;      H.I. Smith

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here you go

dcircuit

thanks