求一篇IEEE论文：Reduction of channel hot-electron-generated substrate current in sub-150-nm channel length Si M...

ives · 发表于 2020-7-6 12:37:14

马上注册，结交更多好友，享用更多功能，让你轻松玩转社区。

您需要登录才可以下载或查看，没有账号？注册

x

Reduction of channel hot-electron-generated substrate current in sub-150-nm channel length Si MOSFET's

Page(s): 497 - 499

  Date of Publication:Oct. 1988


ISSN Information:


INSPEC Accession Number: 3291616

DOI:  10.1109/55.17823

  Publisher: IEEE

G.G. Shahidi

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
   ;    D.A. Antoniadis       ;    H.I. Smith

blam · 发表于 2020-7-6 15:19:33

here you go

dcircuit · 发表于 2020-7-6 21:01:13

thanks

[求助] 求一篇IEEE论文：Reduction of channel hot-electron-generated substrate current in sub-150-nm channel length Si M...

马上注册，结交更多好友，享用更多功能，让你轻松玩转社区。

站长推荐 /1