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发表于 2020-8-3 09:48:31
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Keynote : Attack-Resistant Energy-Efficient SoC for Smart & Secure IoT
2-1 A 415 nW Physically and Mathematically Secure Electro-Quasistatic
HBC Node in 65nm CMOS for Authentication and Medical Applications
2-2 An Authentication IC with Visible Light Based
Interrogation in 65nm CMOS
2-3 Deep Learning Side-Channel Attack Resilient AES-
256 using Current Domain Signature Attenuation
in 65nm CMOS
3-1 A 7.7~10.3GHz 5.2mW −247.3dB-FOM Fractional-N Reference Sampling PLL with 2nd Order CDAC Based Fractional Spur Cancellation In 45nm CMOS
3-2 A Wideband 180-GHz Phase-Locked-Loop Based MSK Receiver
3-3 A 0.55mW Fractional-N PLL with a DC-DC Powered Class-D VCO Achieving Better than -66dBc Fractional and Reference Spurs for NB-IoT
4-1 Edge Computing and Resilient Hardware in Future Mobile (and) Autonomous Machines
4-2 Cadence Functional Safety Solution
4-3 lectronics for Vehicles of the Future – Gate
Drivers with Integrated Power Management
5-1 Multi-Die Integration Using Advanced Packaging Technologies
5-2 A Fully Synthesized Integrated Buck Regulator with Auto-generated GDS-II in 65nm CMOS Process
Session 6 - Emerging Technology
6-1
Doping of Aluminum Nitride and the Impact on Thin Film Piezoelectric and Ferroelectric Device Performance
6-2 Realization of an Energy-Efficient and Full-Swing Decoder with Unipolar TFT Technology
6-3 A Fully-Printed Organic Smart Temperature Sensor for Cold Chain Monitoring Applications
7-1 A 0.5–3 GHz I/Q Interleaved Direct-Digital RF Modulator with up to 320 MHz Modulation Bandwidth in 40 nm CMOS
7-2 A 28GHz Two-Way Current Combining Stacked-FET Power Amplifier in 22nm FD-SOI
7-3 Mixer-First Extremely Wideband 43-97 GHz RX Frontend with Broadband Quadrature Input Matching and Current Mode Transformer-Based Image Rejection for Massive MIMO Applications
7-5 Millimeter-Wave CMOS Phased-Array Transceiver Supporting Dual-Polarized MIMO for 5G NR
7-6 A Fully Integrated, Dual Channel, Flip Chip Packaged 113 GHz Transceiver in 28nm CMOS Supporting an 80 Gb/s Wireless Link
17-1 Randomized Pulse-Modulating Instruction-Issue Control Circuit for a Current and Temperature Limiting System in a 7nm Hexagon™ Compute DSP
17-2 : A 41.5 pJ/bit, 2.4 GHz Digital-Friendly Orthogonally Tunable Transceiver SoC with 3-decades of Energy-Performance Scalability
17-3 Digital control of Switching & Linear IVRs: An Overview of State of the Art
17-4 An Energy-Efficient RISC-V RV32IMAC Microcontroller for Periodical-Driven Sensing Applications
17-5 A Static Contention-Free Differential Flip-Flop in 28nm for Low-Voltage, Low-Power Applications
18-1 Ultra-Low Power Receivers for IoT Applications: A Review
18-2 A 1.6mm 3 Wirelessly Powered Reconfigurable FDD Radio with On-Chip Antennas Achieving 4.7 pJ/b TX and 1 pJ/b RX Energy Efficiencies for Medical Implants
18-3 A -108dBm Sensitivity, -28dB SIR, 130nW to 41µW, Digitally Reconfigurable Bit-Level Duty- Cycled Wakeup and Data Receiver
23-1 Continuous-Time Bandpass Delta-Sigma Modulators and Bitstream Processing
23-2 A 20MHz BW CT Delta-Sigma ADC Achieving 82.1dB SNDR and >100dB SFDR Using a Time-Interleaved Virtual-Ground-Switched DAC 23-3 A 80dB DR 6MHz Bandwidth Pipelined Noise Shaping SAR ADC with 1-2 MASH structure
23-4 A 77.1-dB 6.25-MHz-BW Pipeline SAR ADC with Enhanced Interstage Gain Error Shaping and Quantization Error Shaping
Session
24-1- GaN and High Voltage Power Converter A 91% efficient 30V hybrid boost-SC converter-based backlight LED driver in 180nm CMOS
24-2 An 80-117V Pseudo-Adiabatic Drive Circuit for Microrobotic Actuators with Optical Power Delivery and Peak Power Reduction Factor over 14×
24-3 A Power-Efficient Hybrid Single-Inductor Bipolar-Output DC-DC Converter with Floating Negative Output for AMOLED Displays
24- 4 A 9 45V Input 2MHz 3-Switch ZVS Step-up / -down Hybrid Converter with 5x Volume Reduction
25-1 Technology Scaling of ESD Devices in State of the Art FinFET Technologies
25-2 ESD Protection Design Overview in Advanced SOI and Bulk FinFET Technologies
25-3 A 6-Transistor Ultra-Low Power CMOS Voltage Reference with 0.02%/V Line Sensitivity
25-4 A 0.5V-to-0.9V 0.2GHz-to-5GHz Ultra-Low- Power Digitally-Assisted Analog Ring PLL with Less Than 200ns Lock Time in 22nm FinFET CMOS Technology
25-5 A DTMOST-based Temperature Sensor with 3 Inaccuracy of ±0.9°C for Self-Refresh Control in 28nm Mobile DRAM
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