【2015 文字版】The IGBT Device：Physics, Design and Applications of the

hsh22 · 发表于 2018-11-1 15:48:35

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文字版 The IGBT Device：Physics, Design and Applications of the Insulated Gate Bipolar Transistor

The IGBT Device：Physics, Design and Applications of the Insulated Gate Bipolar.part1.rar (15 MB, 下载次数: 477 )

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In 1977, I submitted a patent disclosure on vertical MOS-gated thyristors that contains the basic IGBT structure while working for the General Electric (GE) Company. After developing a V-grove process for making the structure, the fabrication of the devices was started in November 1978 and completed in July 1979. In addition to the latched-up thyristor mode of operation, my measurements clearly showed the IGBT-mode of operation

dcircuit · 发表于 2018-11-1 21:02:22

thanks

tu_yjq123 · 发表于 2018-11-1 21:36:18

多谢分享

apteye · 发表于 2018-11-1 22:05:30

goodbook

cdting · 发表于 2018-11-2 00:24:36

非常感謝~~~

yuanpin318 · 发表于 2018-11-2 09:11:20

谢谢分享

xuleiwx · 发表于 2018-11-3 09:07:57

下载看看

splendo · 发表于 2018-11-4 23:59:59

thank you

xiaohaolaoda · 发表于 2018-11-5 09:40:18

多谢楼主~

virsim · 发表于 2018-11-5 12:27:06

多谢分享

[资料] 【2015 文字版】The IGBT Device：Physics, Design and Applications of the

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