On-chip ESD for RF circuits in CMOS technology

semico_ljj

On-chip ESD protection strategies for RF circuits in CMOS technology

Ming-Dou Ker

期刊 Ming-Dou Ker and Y.-W. Hsiao, “On-chip ESD protection strategies for RF circuits in CMOS technology,” Proc. of the 8th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Shanghai, China, Oct. 23-26, 2006, pp. 1680-1683.
摘要         Electrostatic discharge (ESD) protection design for RF circuits has been one of the key challenges to implement RF ICs in CMOS technology. On-chip ESD protection circuit at the RF I/O pads often cause unacceptable degradation to RF circuits. In this paper, ESD protection design considerations for RF circuits are addressed, and on-chip ESD protection strategies for both narrow band and broadband CMOS RF circuits are also presented and discussed.

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