Transistor Level Modeling for Analog/RF IC Design

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semico_ljj

Transistor Level Modeling for
Analog/RF IC Design
Edited by
Geneva Modeling Center, Freescale, Switzerland
BART NAUWELAERS
K.U. Leuven, Belgium
and
DOMINIQUE SCHREURS
K.U. Leuven, Belgium
WLADYSLAW GRABINSKI

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FOREWORD
Among many great inventions made in the 20th century, electronic circuits,
which later evolved into integrated circuits, are probably the biggest, when
considering their contribution to human society. Entering the 21st century, the
importance of integrated circuits has increased even more. In fact, without the
help of integrated circuits, recent high-technology society with the internet,
cellular phone, car navigation, digital camera, and robot would never have
been realized. Nowadays, integrated circuits are indispensable for almost every
activity of our society.
One of the critical issues for the fabrication of integrated circuits has been
the precise design of the high-speed or high-frequency operation of circuits with
huge number of components. It is quite natural to predict the circuit operation
by computer calculation, and there have been three waves for this, at 15-year
intervals. The first wave came at the beginning of the 1970s when LSIs (Large
Scale Integrated circuits) with more than 1000 components had just been introduced
into the market.A mainframe computer was used for the simulation, and
each semiconductor company used its own proprietary simulators and device
models. However, the capability of the computer and accuracy of the model
were far from satisfactory, and there are many cases of the necessity of circuit
re-design after evaluation of the first chip.
The second wave hit us in the middle of 1980s, when the EWS (Engineering
Work Station) was introduced for use by designers. At that time, most of
the simulation tools were already provided by software vendors and standard
device models for public use were being established. The simulation of circuits
became considerably more accurate and the amount of re-design was
significantly reduced. The third wave started to flood us at the beginning of
this century, when the PC provided sufficiently high performance for circuit
simulation.We are facing the front of the third wave now.

semico_ljj

TABLE OF CONTENTS
Foreword vii
Hiroshi Iwai
Introduction ix
Wladek Grabinski, Bart Nauwelaers and Dominique Schreurs
1
2/3-D process and device simulation. An effective tool
for better understanding of internal behavior
of semiconductor structures 1
Daniel Donoval, Andrej Vrbicky, Ales Chvala, and Peter Beno
2
PSP: An advanced surface-potential-based MOSFET model 29
R. van Langevelde, and G. Gildenblat
3
EKV3.0: An advanced charge based MOS transistor model.
A design-oriented MOS transistor compact model for next
generation CMOS 67
Matthias Bucher, Antonios Bazigos, François Krummenacher,
Jean-Micehl Sallese, and Christian Enz
4
Modelling using high-frequency measurements 97
5
Empirical FET models 121
Iltcho Angelov
6
Modeling the SOI MOSFET nonlinearities.
An empirical approach 157
B. Parvais, A. Siligaris
7
Circuit level RF modeling and design 181
Nobuyuki Itoh
8
On incorporating parasitic quantum effects in classical
circuit simulations 209
Frank Felgenhauer, Maik Begoin and Wolfgang Mathis
9
Compact modeling of the MOSFET in VHDL-AMS 243
Christophe Lallement, François Pêcheux, Alain Vachoux
and Fabien Prégaldiny
10
Compact modeling in Verilog-A 271
Boris Troyanovsky, Patrick O’Halloran and Marek Mierzwinski
Index 293

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