The gate driver uses a tripler charge pump to generate the appropriate gate to source voltage bias for the
external, high-side N-channel power MOSFETs during low supply conditions. A regulated 10-V LDO derived from
the charge pump supplies the gate to source voltage bias for the low-side N-channel MOSFET.
从手册描述来看,由于需要从电荷泵regulated一个10V的低侧栅极驱动电压,所以该产品使用了三倍电荷泵结构,最低输入电压4.4X3>10v,外挂两个飞电容一个负载电容,从引脚描述的飞电容耐压也可以推出电路结构。