Candence Project 练习

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现在发起一个适用于新手练习project的活动。希望大家一起完成一起进步。

Part I: Sub-threshold leakage and short-channel effect simulation (亚导通漏电流和短沟道效应）
(1)  Find the sub-threshold leakage for the NMOS and PMOS transistors with minimum size from ID vs. VGS plot;

(2)  Obtain the sub-threshold slop;
(3)  Extract the process parameter nfrom the plot
(4)  Plot the output characteristic for both transistors`;

amigo.change

amigo.change