DC综合求门数，.13库里NAND面积比.18库里NAND大好多？

sqqwm

smic13g 库内cell (NAND2X1) {
  cell_footprint : nand2;
  area : 5.092200;
  pin(A) {
    direction : input;
    capacitance : 0.002978;
  }
  pin(B) {
    direction : input;
    capacitance : 0.002803;
  }
  pin(Y) {
    direction : output;
    capacitance : 0.0;
    function : "(!(A B))";


csmc018_max库内
  cell (nd02d1) {
    cell_leakage_power : 354.735;
    leakage_power () {
      value : 197.608;
      when : "A&B";
    }
    leakage_power () {
      value : 478.824;
      when : "A&!B";
    }
    leakage_power () {
      value : 580.559;
      when : "!A&B";
    }
    leakage_power () {
      value : 161.949;
      when : "!A&!B";
    }
    area : 0.75;
    cell_footprint : "nd02d";
    pin (Y) {
      direction : output;
      function : "(!(B&A))";



.13库里NAND面积比.18库里NAND面积还要大？虽然不是一家的库，但是怎么会这么离谱？请各位前辈不吝赐教~~~~~

另外我用DC求工程所用门数的方法是下面这个方法，对吗？

‘To get the equivalent gate area in Design compiler need to add two comamnds in TCl script.

1. First to get the total area of your design, use report_area.
2. Then divide this area by the area for a 2-input NAND gate in your technology library. You can also use the following command to find out the area for a 2-input nand gate.
dc_shell-xg-t> get_attribute { technology library/2_input_nand_gate_name } area
to get the 2_input_nand_gate_name, use report_lib <tecnology_lib > and select the any drive strength. Usually its 1x drive strength.
Area = $report_area/Area_of nand gate’

sqqwm

高人请指导下嘛

dcircuit

是不是一个低功耗的，一个高速的

sqqwm

回复 3# dcircuit

这个应该怎么看？0.13的库是slow_1v08c125  二输入与非门面积5.09
  operating_conditions (slow) {
    process : 1;
    temperature : 125;
    tree_type : balanced_tree;
    voltage : 1.62;
  }

0.18的库是csmc018_max    二输入与非门面积0.75
  operating_conditions(slow_1v08c125) {
    process
: 1;
    temperature
: 125;
    voltage
: 1.08;
    tree_type
: balanced_tree
  }

jason890

看一下*.lib文件， 或文档中的面积单位。

sqqwm

回复 5# jason890

朋友，上面的内容是.lab里复制出来的，问的就是为啥.13库里NAND面积比.18库里NAND还要大好多？

bukubuku

直接看LEF或者GDS，量一下到底多大