Process HJ:High Linearity RF Circuits.

gnoc · 发表于 2014-3-13 17:23:41

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ABSTRACT
This paper describes "Process HJ" a new high speed,
low power complementary bipolar technology suitable for
RF applications, which features high frequency NPN and
PNP transistors of 30GHz and 20GHz, respectively. The
technology uses fully isolated double polysilicon selfaligned
architecture and 0.6μm emitters. Resistors,
capacitors, inductors and 3 levels of metallisation are also
incorporated.

Process_HJ_A_30GHz_NPN_and_20GHz_PNP_Complementary_Bipolar_Process_for_HighLinearityRFCircuits.pdf (243.24 KB , 下载次数: 22 )

efong · 发表于 2016-5-28 10:01:34

THANK YOU

dannymu · 发表于 2020-6-23 17:43:06

谢谢

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[资料] Process HJ:High Linearity RF Circuits.

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